SavantIC Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BDY57 VCBO Collector-base voltage 80 Open base BDY58 VEBO Emitter-base voltage V 160 BDY57 Collector-emitter voltage UNIT 120 Open emitter BDY58 VCEO VALUE V 125 Open collector 10 V IC Collector current 25 A IB Base current 6 A PT Total power dissipation 175 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO PARAMETER Collector-emitter sustaining voltage Collector-emitter breakdown voltage CONDITIONS BDY57 MIN TYP. MAX UNIT 80 V IC=0.1A ; IB=0 BDY58 125 BDY57 120 IC=5mA ; IE=0 V 160 BDY58 VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A 1.4 V VBEsat Base-emitter saturation voltage IC=10A ;IB=1A 1.4 V ICBO Collector cut-off current VCB=100V; IE=0 0.5 mA ICER Collector cut-off current VCE=80V; RBE=10?;TC=100 10 mA IEBO Emitter cut-off current VEB=10V; IC=0 0.5 mA hFE-1 DC current gain IC=10A ; VCE=4V hFE-2 DC current gain IC=20A ; VCE=4V fT Transition frequency IC=1A ; VCE=15V,f=10MHz ton Turn-on time IC=15A ;IB=1.5A 2 20 60 15 10 MHz 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDY57 BDY58