IXYS IXGX32N170AH1

Advance Technical Information
IXGX 32N170AH1
High Voltage
IGBT with Diode
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
32
A
IC90
TC = 90°C
21
A
55
A
110
A
IF90
ICM
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5Ω
Clamped inductive load
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω
10
PC
TC = 25°C
350
W
ICM = 70
@ 0.8 VCES
µs
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
22...130/5...30
N/lb
FC
Mounting force
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
°C
300
Weight
6
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
© 2004 IXYS All rights reserved
PLUS247 (IXGX)
G
(TAB)
C
G = Gate,
E = Emitter,
E
C = Collector,
TAB = Collector
g
Features
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL 94 V-0
flammability classification
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 1mA, VGE = 0 V
= 250 µA, VCE = VGE
= IC90, VGE = 15 V
= 1700 V
=
32 A
=
5.0 V
=
50 ns
A
TJM
TJ
VCES
IC25
VCE(sat)
tfi(typ)
1700
3.0
Note 1
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
4.0
4.8
5.0
V
V
600
10
µA
mA
±100
nA
5.0
V
V
DS99070A(10/04)
IXGX
Symbol
Test Conditions
gfs
IC = IC25; VCE = 10 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
16
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
23
S
3500
pF
310
pF
40
pF
155
nC
30
nC
51
nC
46
ns
Cres
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
Inductive load, TJ = 25°°C
td(off)
IC = IC25, VGE = 15 V
tfi
RG = 2.7 Ω, VCE = 0.5 VCES
57
500
ns
50
100
ns
2.5
4.2 mJ
td(on)
48
ns
59
ns
Inductive load, TJ = 125°°C
Eon
IC = IC25, VGE = 15 V
td(off)
RG = 2.7 Ω, VCE = 0.5 VCES
tfi
4.0
mJ
300
ns
70
ns
3.0
mJ
0.15
0.35 K/W
K/W
Eoff
RthJC
RthCK
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = 60A, VGE = 0 V, Pulse test,
2.4
t ≤ 300 µs, duty cycle d ≤ 2 %
TJ = 125°C
VR = 1200 V
TJ = 125°C
V
V
50
A
TJ = 125°C
t rr
2.7
2.4
IF = 60A, VGE = 0 V, -diF/dt = 600 A/µs
IRM
PLUS247 Outline (IXGX)
ns
260
Eoff
tri
32N170AH1
55
A
150
ns
350
ns
0.35 K/W
RthJC
Notes: 1.
2.
3.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
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5,017,508
5,034,796
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5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
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6,759,692