Advance Technical Information IXGX 32N170AH1 High Voltage IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A 55 A 110 A IF90 ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 PC TC = 25°C 350 W ICM = 70 @ 0.8 VCES µs -55 ... +150 °C 150 °C Tstg -55 ... +150 °C 22...130/5...30 N/lb FC Mounting force Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 Weight 6 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC © 2004 IXYS All rights reserved PLUS247 (IXGX) G (TAB) C G = Gate, E = Emitter, E C = Collector, TAB = Collector g Features z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 1mA, VGE = 0 V = 250 µA, VCE = VGE = IC90, VGE = 15 V = 1700 V = 32 A = 5.0 V = 50 ns A TJM TJ VCES IC25 VCE(sat) tfi(typ) 1700 3.0 Note 1 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 4.0 4.8 5.0 V V 600 10 µA mA ±100 nA 5.0 V V DS99070A(10/04) IXGX Symbol Test Conditions gfs IC = IC25; VCE = 10 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 23 S 3500 pF 310 pF 40 pF 155 nC 30 nC 51 nC 46 ns Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri Inductive load, TJ = 25°°C td(off) IC = IC25, VGE = 15 V tfi RG = 2.7 Ω, VCE = 0.5 VCES 57 500 ns 50 100 ns 2.5 4.2 mJ td(on) 48 ns 59 ns Inductive load, TJ = 125°°C Eon IC = IC25, VGE = 15 V td(off) RG = 2.7 Ω, VCE = 0.5 VCES tfi 4.0 mJ 300 ns 70 ns 3.0 mJ 0.15 0.35 K/W K/W Eoff RthJC RthCK Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 60A, VGE = 0 V, Pulse test, 2.4 t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 125°C VR = 1200 V TJ = 125°C V V 50 A TJ = 125°C t rr 2.7 2.4 IF = 60A, VGE = 0 V, -diF/dt = 600 A/µs IRM PLUS247 Outline (IXGX) ns 260 Eoff tri 32N170AH1 55 A 150 ns 350 ns 0.35 K/W RthJC Notes: 1. 2. 3. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % See DH60-18A and IXGH32N170A datasheets for additional characteristics IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692