'$7$6+((7 6,/,&2175$16,6725 6' 1316,/,&21(3,7$;,$/75$16,6725 )25/2:)5(48(1&<32:(5$03/,),(56 PACKAGE DRAWING (UNIT: mm) The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES • Low VCE(sat): VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA VCE(sat)2 = 150 mV TYP. @IC = 500 mA, IB = 20 mA • High hFE and high current QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit VCBO 16 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 5 V Collector current (DC) ID(DC) 500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector to base voltage Electrode connection 1. Emitter (E) 2. Base (B) 3. Collector (C) Marking: D46 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. 'RFXPHQW1R'(-9'6VWHGLWLRQ 'DWH3XEOLVKHG$SULO1&3. 3ULQWHGLQ-DSDQ © 2002 1998 2SD2230 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions TYP. MAX. Unit Collector cutoff current ICBO VCB = 16 V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 6.0 V, IC = 0 100 nA DC current gain hFE1* VCE = 1.0 V, IC = 100 mA 200 − DC current gain hFE2* VCE = 1.0 V, IC = 500 mA 200 − DC base voltage VBE* VCE = 1.0 V, IC = 10 mA 550 Collector saturation voltage VCE(sat)1 IC = 100 mA, IB = 10 mA Collector saturation voltage VCE(sat)2 IC = 500 mA, IB = 20 mA Output capacitance Gain bandwidth product Cob fT VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 1.0 V, IE = −100 mA * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% 2 MIN. Data Sheet D16153EJ1V0DS 50 700 mV 33 50 mV 150 200 mV 15 pF MHz 2SD2230 TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16153EJ1V0DS 3 2SD2230 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC sales representative. Surface Mounting Type For details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting Technology Manual (C10535E). Soldering Method Infrared reflow Soldering Conditions Package peak temperature: 230°C, Time: 30 sec. max. (at 210°C or higher), Recommended Condition Symbol IR30-00 Count: Once, Exposure limit: None* VPS Package peak temperature: 215°C, Time: 40 sec. max. (at 200°C or higher), VP15-00 Count: Once, Exposure limit: None* Partial heating Pin temperature: 300°C max., Time: 10 sec. max. Exposure limit: None* O * After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). 4 Data Sheet D16153EJ1V0DS 2SD2230 [MEMO] Data Sheet D16153EJ1V0DS 5 2DS2230 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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