ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com ISOLATED 3.3-V HALF AND FULL-DUPLEX RS-485 TRANSCEIVERS Check for Samples: ISO15, ISO35, ISO15M, ISO35M FEATURES DESCRIPTION • The ISO15 is an isolated half-duplex differential line transceiver while the ISO35 is an isolated full-duplex differential line driver and receiver for TIA/EIA 485/422 applications. The ISO15M and ISO35M have extended ambient temperature ratings of –55°C to 125°C while the ISO15 and ISO35 are specified over –40°C to 85°C. 1 • • • • • • • • These devices are ideal for long transmission lines since the ground loop is broken to allow for a much larger common-mode voltage range. The symmetrical barrier of the device is tested to provide isolatlion of 4000 VPK per VDE and 2500 VRMS per UL and CSA between the bus-line transceiver and the logic-level interface. Any cabled I/O can be subjected to electrical noise transients from various sources. These noise transients can cause damage to the transceiver and/or near-by sensitive circuitry if they are of sufficient magnitude and duration. These isolated devices can significantly increase protection and reduce the risk of damage to expensive control circuits. APPLICATIONS • • • • • • Security Systems Chemical Production Factory Automation Motor/motion Control HVAC and Building Automation Networks Networked Security Stations ISO15 DW PACKAGE GND1 GND1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 function diagram Vcc2 GND2 R nc RE B DE A D nc GND2 GALVANIC ISOLATION Vcc1 GND1 R RE DE D ISO35 DW PACKAGE 3 4 5 6 13 12 B A GND2 Vcc1 GND1 R RE DE D GND1 GND1 function diagram 1 2 16 15 Vcc2 GND2 3 4 5 6 7 8 14 13 12 A B Z Y GND2 11 10 9 GND2 PRODUCT FOOTPRINT TEMP RATING MARKING ISO15 Half Duplex –40°C to 85°C ISO15 ISO35 Full Duplex –40°C to 85°C ISO35 ISO15M Half Duplex –55°C to 125°C ISO15M ISO35M Full Duplex –55°C to 125°C ISO35M R 3 4 RE 5 DE D 6 GALVANIC ISOLATIO N • 4000-VPK VIOTM, 560-VPK VIORM per IEC 60747-5-2 (VDE 0884, Rev 2) UL 1577, IEC 61010-1, IEC 60950-1 and CSA Approved 1/8 Unit Load – Up to 256 Nodes on a Bus Meets or Exceeds TIA/EIA RS-485 Requirements Signaling Rates up to 1 Mbps Thermal Shutdown Protection Low Bus Capacitance – 16 pF (Typ) 50 kV/μs Typical Transient Immunity Fail-safe Receiver for Bus Open, Short, Idle 3.3-V Inputs are 5-V Tolerant 14 13 12 11 A B Z Y 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2008–2012, Texas Instruments Incorporated ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) VALUE UNIT –0.3 to 6 V Voltage at any bus I/O terminal –9 to 14 V VIT Voltage input, transient pulse, A, B, Y, and Z (through 100Ω, see Figure 11) –50 to 50 V VI Voltage input at any D, DE or RE terminal –0.5 to 7 V IO Receiver output current ±10 mA VCC Input supply voltage. VO (2) VCC1, VCC2 Human Body Model ESD TJ (1) (2) Electrostatic discharge JEDEC Standard 22, Test Method A114-C.01 Charged Device Model JEDEC Standard 22, Test Method C101 Machine Model ANSI/ESDS5.2-1996 Bus pins and GND1 ±6 Bus pins and GND2 ±16 All pins ±4 kV kV ±1 All pins Maximum junction temperature ±200 V 170 °C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values RECOMMENDED OPERATING CONDITIONS VCC Supply Voltage, VCC1, VCC2 VOC Voltage at either bus I/O terminal VIH High-level input voltage VIL Low-level input voltage VID Differential input voltage RL Differential input resistance IO Output current 1/tUI Signaling rate TA Ambient temperature TJ Operating junction temperature A, B D, DE, RE MIN TYP MAX 3.15 3.3 3.6 V –7 12 V 2 VCC 0 0.8 –12 A with respect to B Receiver V 12 54 Driver UNIT V Ω 60 –60 60 –8 8 ISO15x and ISO35x mA 1 ISO15 and ISO35 -40 85 ISO15M and ISO35M -55 125 ISO15 and ISO35 –40 150 ISO15M and ISO35M –55 150 Mbps °C °C SUPPLY CURRENT over recommended operating condition (unless otherwise noted) PARAMETER TEST CONDITIONS MIN ICC1 Logic-side supply current ISO35x and RE at 0 V or VCC, DE at 0 V, No load (driver disabled) ISO15x RE at 0 V or VCC, DE at VCC, No Load (driver enabled) ICC2 Bus-side supply current ISO35x and RE at 0 V or VCC, DE at 0 V, No load (driver disabled) ISO15x RE at 0 V or VCC, DE at VCC, No Load (driver enabled) 2 Submit Documentation Feedback TYP MAX 8 15 8 19 UNIT mA mA Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com DRIVER ELECTRICAL CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER | VOD | TEST CONDITIONS Differential output voltage magnitude MIN IO = 0 mA, no load 2.5 RL = 54 Ω, See Figure 1 1.5 2 2 2.3 RL = 100 Ω (RS-422), See Figure 1 Vtest from –7 V to +12 V, See Figure 2 Δ|VOD| Change in magnitude of the differential output voltage VOC(SS) Steady-state common-mode output voltage TYP See Figure 3 Change in steady-state common-mode output voltage VOC(pp) Peak-to-peak common-mode output voltage See Figure 3 II Input current UNIT VCC V 1.5 See Figure 1 and Figure 2 ΔVOC(SS) MAX –0.2 0 0.2 1 2.6 3 –0.1 0.1 0.5 V V –10 D, DE, VI at 0 V or VCC1 V 10 μA ISO15 See receiver input current VY or VZ = 12 V IOZ High-impedance state output current ISO35 90 VY or VZ = 12 V, VCC = 0 VY or VZ = –7 V Other input at 0 V VY or VZ = –7 V, VCC = 0 VA or VB at –7 V –10 μA -10 Other input at 0 V Short-circuit output current VA or VB at 12 V COD Differential output capacitance VI = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V CMTI Common-mode transient immunity VI = VCC or 0 V, See Figure 12 and Figure 13 IOS 90 –250 25 250 mA 16 pF 50 kV/μs TYP MAX UNIT DRIVER SWITCHING CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN tPLH, tPHL Propagation delay 340 tsk(p) Pulse skew (|tPHL – tPLH|) tr, tf Differential output signal rise time, fall time tPHZ Propagation delay, high-level-to-high-impedance output tPZH Propagation delay, high-impedance-to-high-level output tPLZ Propagation delay, low-level to high-impedance output tPZL Propagation delay, standby-to-low-level output ISO15 and ISO35 See Figure 4 ISO15M and ISO35M See Figure 5 See Figure 6 Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M 6 120 180 300 120 180 350 205 530 330 530 Submit Documentation Feedback ns ns ns 3 ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com RECEIVER ELECTRICAL CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS VIT(+) Positive-going input threshold voltage IO = –8 mA VIT(–) Negative-going input threshold voltage IO = 8 mA Vhys Hysteresis voltage (VIT+ – VIT–) VO Output voltage VID = 200 mV, See Figure 7 IOZ High-impedance state output current VI = –7 to 12 V, Other input = 0 V 85oC ≤ TA ≤ 125oC Bus input current TYP MA X –20 –200 -55oC ≤ TA ≤ 125oC IO = –8 mA 2.4 IO = 8 mA 0.4 –1 1 50 100 VA or VB = 12 V, VCC = 0 50 100 VA or VB = 12 V, VCC = 0 mV mV VA or VB = 12 V VA or VB = 12 V UNIT mV 50 -55oC ≤ TA ≤ 85oC IA or IB MIN 200 Other input at 0V 200 VA or VB = –7 V –100 –40 VA or VB = –7 V, VCC = 0 –100 –30 V μA μA IIH High-level input current, RE VIH = 2 V –10 μA IIL Low-level input current, RE VIL = 0.8 V –10 μA RID Differential input resistance A, B 48 kΩ CID Differential input capacitance VI = 0.4 sin (4E6πt) + 0.5V, DE at 0 V 16 pF RECEIVER SWITCHING CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER tPLH, tPHL Propagation delay tsk(p) Pulse skew (|tPHL – tPLH|) TEST CONDITIONS MIN TYP ISO15x and ISO35x 4 ISO15M and ISO35M 2 6 13 25 13 25 tPZH, tPZL Propagation delay, high-impedance-to-high-level output Propagation delay, high-impedance-to-low-level output tPHZ, tPLZ Propagation delay, high-level-to-high-impedance output Propagation delay, low-level to high-impedance output Submit Documentation Feedback 18 See Figure 8 2 Output signal rise and fall time 4 13 ISO15 and ISO35 tr, tf UNIT 100 ISO15 and ISO35 ISO15M and ISO35M MAX DE at 0 V, See Figure 9 and Figure 10 ns ns Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com PARAMETER MEASUREMENT INFORMATION VCC1 VCC2 IOA DE DE A II 0 or VCC1 D D 0 or 3 V VOD B GND1 375 W A + VOD - B 60 W IOB GND2 375 W GND2 VI VOA VOB GND1 -7 V to 12 V GND2 Figure 1. Driver VOD Test and Current Definitions Figure 2. Driver VOD With Common-Mode Loading Test Circuit VCC1 IOA DE 27 W A A VA B VB II VOD Input D VI B GND1 VOB VOC 27 W IOB GND2 VOA VOC(SS) VOC(PP) VOC GND2 GND1 Figure 3. Test Circuit and Waveform Definitions For The Driver Common-Mode Output Voltage 3V DE VCC1 A D Input Generator VI B VI VOD RL = 54 W ±1% CL = 50 pF ±20% tPHL tPLH VOD 50 W 50% 50% 90% 50% 10% GND1 tr Generator: PRR = 500 kHz, 50% duty cycle, tr <6ns, tf <6ns, ZO = 50 W VOD(H) 90% 50% 10% tf VOD(L) CL includes fixture and Instrumentation Capacitance Figure 4. Driver Switching Test Circuit and Voltage Waveforms NOTE: Driver output pins are A and B for the ISO15 (See Figure 1 through Figure 4). These correspond to ISO35 pins Y and Z Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M Submit Documentation Feedback 5 ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) A 3V VO S1 D 3V VI B DE tPZH CL includes fixture and Instrumentation capacitance 50 W 50% 0V RL = 110 W ±20% CL = 50 pF ±20% Input Generator 50% 50% VO VOH 90% 0V tPHZ Figure 5. Driver High-Level Output Enable and Disable Time Test Circuit and Voltage Waveforms 3V RL = 110W ±1% A 0V S1 D 3V B 0V tPLZ VO CL = 50 pF ±20% VI 50% tPZL DE Input Generator 50% VI VO 50% 5V 10% 50 W GND1 VOL GND2 Generator: PRR = 500 kHz, 50% duty cycle, tr <6ns, tf <6ns, ZO = 50W CL includes fixture and Instrumentation capacitance Figure 6. Driver Low-Level Output Enable and Disable Time Test Circuit and Voltage Waveform NOTE: Driver output pins are A and B for the ISO15 (SeeFigure 5 through Figure 6). These correspond to ISO35 pins Y and Z A IA IO R V VA VA+ V B ID B VIC VO IB VB 2 Figure 7. Receiver Voltage and Current Definitions 3V A Input Generator VI R 50 W 1.5 V B Generator: PRR = 500 kHz, 50% duty cycle, tr <6ns, tf <6ns, ZO = 50 W RE VO CL = 15 pF ±20% 50% VI tPHL tPLH VO 50% 50% tr CL includes fixture and instrumentation capacitance 0V VOH 90% 50% 10% VOL tf Figure 8. Receiver Switching Test Circuit and Waveforms 6 Submit Documentation Feedback Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) 1.5 V R VO B 0V Input Generator VCC A VI 1 kW ±1% 3V VI S1 0V CL = 15 pF ±20% RE 50% 50% tPHZ tPZH CL includes fixture and instrumentation capacitance 90% 50% VO VOH ˜˜ 0V 50 W Generator: PRR = 500 kHz, 50% duty cycle, tr <6ns, tf <6ns, ZO = 50W Figure 9. Receiver Enable Test Circuit and Waveforms, Data Output High R B 1.5 V Input Generator VCC A 0V VI VO 1 kW ±1% RE 3V S1 VI CL = 15 pF ±20% 50% 50% 0V CL includes fixture and instrumentation capacitance tPZL VO 50 W tPLZ 50% VCC 10% VOL Generator: PRR = 500 kHz, 50% duty cycle, tr <6ns, tf <6ns, ZO = 50W Figure 10. Receiver Enable Test Circuit and Waveforms, Data Output Low 0V RE A R B Pulse Generator 15 ms duration 1% duty cycle tr, tf <100 ns 100 W ±1% + - D DE 3V Note: This test is conducted to test survivability only. Data stability at the R output is not specified. Figure 11. Transient Over-Voltage Test Circuit Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M Submit Documentation Feedback 7 ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) VCC2 C = 0.1 mF VCC1 ±1% 2V C = 0.1 mF ±1% DE GND 1 S1 D 54 W VOH or VOL 0.8 V R VOH or VOL RE 1 kW GND 2 GND 1 CL = 15 pF (includes probe and jig capacitance) V TEST Figure 12. Half-Duplex Common-Mode Transient Immunity Test Circuit C = 0.1 mF V CC1 ±1% 2V VCC2 Y DE GND1 D C = 0.1 mF ±1% VOH or VOL 54 W S1 Z A 1.5 V or 0V 0.8 V R VOH or VOL 54 W RE 1 kW B 0 V or 1.5 V GND 2 GND 1 CL = 15 pF (includes probe and jig capacitance) V TEST Figure 13. Full-Duplex Common-Mode Transient Immunity Test Circuit 8 Submit Documentation Feedback Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com DEVICE INFORMATION Table 1. Driver Function Table VCC1 (1) VCC2 INPUT (D) (1) ENABLE INPUT (DE) OUTPUTS A or Y (1) B or Z PU PU H H H L PU PU L H L H PU PU X L Z Z PU PU X OPEN Z Z PU PU OPEN H H L PD PU X X Z Z PU PD X X Z Z PD PD X X Z Z PU = Power Up, PD = Power Down Table 2. Receiver Function Table VCC1 (1) (1) VCC2 (1) DIFFERENTIAL INPUT VID = (VA – VB) ENABLE (RE) OUTPUT ®) PU PU –0.01 V ≤ VID L H PU PU –0.2 V < VID < –0.01 V L ? PU PU VID ≤ –0.2 V L L PU PU X H Z PU PU X OPEN Z PU PU Open circuit L H PU PU Short Circuit L H PU PU Idle (terminated) bus L H PD PU X X Z PU PD X L H PU = Power Up, PD = Power Down Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M Submit Documentation Feedback 9 ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com PACKAGE CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER (1) TEST CONDITIONS MIN Minimum air gap (Clearance) Shortest terminal to terminal distance through air 8.34 mm L(I02) Minimum external tracking (Creepage) Shortest terminal to terminal distance across the package surface 8.1 mm CTI Tracking resistance (Comparative Tracking Index) DIN IEC 60112 / VDE 0303 Part 1 ≥400 V Minimum Internal Gap (Internal Clearance) Distance through the insulation 0.008 mm RIO Isolation resistance Input to output, VIO = 500 V, all pins on each side of the barrier tied together creating a two-terminal device CIO Barrier capacitance Input to output CI Input capacitance to ground L(I01) (1) TYP MAX UNIT >1012 Ω VI = 0.4 sin (4E6πt) 2 pF VI = 0.4 sin (4E6πt) 2 pF Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed circuit board do not reduce this distance. Creepage and clearance on a printed circuit board become equal according to the measurement techniques shown in the Isolation Glossary. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications. IEC 60664-1 RATINGS TABLE PARAMETER TEST CONDITIONS Basic isolation group Material group Installation classification SPECIFICATION II Rated mains voltage ≤ 150 VRMS I-IV Rated mains voltage ≤ 300 VRMS I-III Rated mains voltage ≤ 400 VRMS I-II IEC 60747-5-2 INSULATION CHARACTERISTICS (1) over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS SPECIFICATION UNIT 560 V V VIORM Maximum working insulation voltage VPR Input to output test voltage Method b1, VPR = VIORM × 1.875, 100% Production test with t = 1 s, Partial discharge < 5 pC 1050 VIOTM Transient overvoltage t = 60 s 4000 V RS Insulation resistance VIO = 500 V at TS >109 Ω Pollution degree (1) 2 Climatic Classification 40/125/21 REGULATORY INFORMATION VDE CSA UL Certified according to IEC 60747-5-2 Approved under CSA Component Acceptance Notice 5A Recognized under 1577 Component Recognition Program Basic Insulation Maximum Transient Overvoltage, 4000 VPK Maximum Surge Voltage, 4000 VPK Maximum Working Voltage, 560 VPK 2500 VRMS rating per CSA 60950-1-07 and IEC 60950-1 (2nd Ed.) for products with working voltages ≤ 280 VRMS for basic insulation. Single Protection, 2500 VRMS File Number: 40016131 File Number: 220991 File Number: E181974 10 Submit Documentation Feedback Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com IEC SAFETY LIMITING VALUES Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry. A failure of the IO can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat the die and damage the isolation barrier potentially leading to secondary system failures. PARAMETER TEST CONDITIONS IS Safety input, output, or supply current DW-16 TS Maximum case temperature DW-16 MIN TYP θJA = 212°C/W, VI = 5.5 V, TJ = 170°C, TA = 25°C MAX UNIT 210 mA 150 °C The safety-limiting constraint is the absolute maximum junction temperature specified in the absolute maximum ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Characteristics table is that of a device installed in the JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages and is conservative. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance. THERMAL CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX Low-K Thermal Resistance (1) 168 High-K Thermal Resistance 96.1 UNIT θJA Junction-to-Air θJB Junction-to-Board Thermal Resistance 61 °C/W θJC Junction-to-Case Thermal Resistance 48 °C/W PD (1) VCC1 = VCC2 = 5.25 V, TJ = 150°C, CL = 15 pF, Input a 20 MHz 50% duty cycle square wave Device Power Dissipation °C/W 220 mW Tested in accordance with the Low-K or High-K thermal metric definitions of EIA/JESD51-3 for leaded surface mount packages. 300 275 Safety Limiting Current - mA 250 225 200 VCC1,2 at 3.6 V 175 150 125 100 75 50 25 0 0 50 100 150 200 TC - Case Temperature - °C Figure 14. DW-16 θJC Thermal Derating Curve per IEC 60747-5-2 Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M Submit Documentation Feedback 11 ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com EQUIVALENT CIRCUIT SCHEMATICS A Input B Input VCC VCC 16V 36kW 16V 180kW 180kW Input 36kW Input 16V 16V 36kW 36kW Y and Z Outputs A and B Outputs VCC VCC 16V 16V Output Output 16V 16V D, RE Input VCC1 DE Input VCC1 VCC1 VCC1 VCC1 1 MW 500W 500W Input Input 1 MW VCC1 R Output 4W Output 6.5W 12 Submit Documentation Feedback Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS CURVES LOW-LEVEL OUTPUT CURRENT vs LOW-LEVEL OUTPUT VOLTAGE HIGH-LEVEL OUTPUT CURRENT vs HIGH-LEVEL OUTPUT VOLTAGE 140 -120 No Load o TA = 25 C No Load o TA = 25 C 120 -100 IO - Output Current - mA IO - Output Current - mA 100 80 60 40 -60 -40 -20 20 0 0 0 1 2 3 4 0 5 1 2 3 VO - Output Voltage - V VO - Output Voltage - V Figure 15. Figure 16. RMS SUPPLY CURRENT vs SIGNALING RATE BUS INPUT CURRENT vs INPUT VOLTAGE 25 4 60 No Load o TA = 25 C 40 II - Bus Input Current - mA 20 RMS Supply Current - mA -80 ICC2 15 10 ICC1 5 TA = 25°C RE = 0 V DE = 0 V 20 0 VCC = 3.3 V -20 -40 0 0 200 400 600 Signaling Rate - kbps 800 1000 -60 -7 -4 -1 2 5 8 11 14 VI - Bus Input Voltage - V Figure 17. Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M Figure 18. Submit Documentation Feedback 13 ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS CURVES (continued) DRIVER DIFFERENTIAL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE DRIVER PROPAGATION DELAY vs FREE-AIR TEMPERATURE 2.15 250 VOD, VCC = 3.3 V 200 2.05 Driver Propagation Delay - ns VOD - Differential Output Voltage - V 2.1 2 1.95 1.9 1.85 150 100 50 1.8 1.75 0 -55 105 125 TA - Free-Air Temperature - oC -55 105 Figure 19. 14 Submit Documentation Feedback 125 TA - Free-Air Temperature - oC Figure 20. Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com APPLICATION INFORMATION Transient Voltages Isolation of a circuit insulates it from other circuits and earth so that noise develops across the insulation rather than circuit components. The most common noise threat to data-line circuits is voltage surges or electrical fast transients that occur after installation. The transient ratings of the ISO15 and ISO35 are sufficient for all but the most severe installations. However, some equipment manufacturers use their ESD generators to test transient susceptibility of their equipment, and can exceed insulation ratings. ESD generators simulate static discharges that may occur during device or equipment handling with low-energy but high voltage transients. Figure 21 models the ISO15 and ISO35 bus IO connected to a noise generator. CIN and RIN is capacitance or resistance across the device and any other stray or added capacitance or resistance across the A or B pin to GND2. CISO and RISO is the capacitance and resistance between GND1 and GND2 of the ISO15 and ISO35 plus those of any other insulation (transformer, etc.). The stray inductance is assumed to be negligible. From this model, the voltage at the isolated bus return is, ZISO VGND2 = VN ZISO + ZIN (1) and will always be less than 16 V from VN. If the ISO15 and ISO35 are tested as a stand-alone device, RIN = 6 × 104Ω, CIN = 16 × 10–12 F, RISO = 109Ω and CISO = 10–12 F. Note from Figure 21 that the resistor ratio determines the voltage ratio at low frequency and it is the inverse capacitance ratio at high frequency. In the stand-alone case and for low frequency, VGND2 RISO 109 = = 9 VN RISO + RIN 10 + 6x104 (2) or essentially all of noise appears across the barrier. At high frequency, VGND2 = VN 1 CISO 1 CISO + 1 CIN 1 = 1 + CISO CIN = 1 1 + 1 16 = 0.94 (3) and 94% of VN appears across the barrier. As long as RISO is greater than RIN and CISO is less than CIN, most of transient noise appears across the isolation barrier. It is not recommend for the user to test equipment transient susceptibility with ESD generators, or consider product claims of ESD ratings above the barrier transient ratings of an isolated interface. ESD is best managed through recessing or covering connector pins in a conductive connector shell and installer training. A, B, Y, or Z CIN VN RIN 16V Bus Return (GND2) CISO RISO System Ground (GND1) Figure 21. Noise Model Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M Submit Documentation Feedback 15 ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com REVISION HISTORY Changes from Original (May 2008) to Revision A Page • Changed L(101) Minimum air gap (Clearance) From 7.7mm To 8.34mm. ........................................................................ 10 • Deleted CSA information from the Regulatory Information Table. ..................................................................................... 10 • Changed From 40014131 To 40016131 ............................................................................................................................. 10 Changes from Revision A (June 2008) to Revision B Page • Changed From: 4000-Vpeak Isolation To: 4000-Vpeak Isolation, 560-Vpeak VIORM UL 1577, IEC 60747-5-2 (VDE 0884, Rev 2) ......................................................................................................................................................................... 1 • Changed Figure 13, Full-Duplex Common-Mode Transient Immunity Test Circuit .............................................................. 8 Changes from Revision B (July 2008) to Revision C Page • Added added IEC......Approved ............................................................................................................................................ 1 • Added added CSA information column back in table ......................................................................................................... 10 Changes from Revision C (December 2008) to Revision D • Page Changed Propagation delay values From: μs To: ns in the DRIVER SWITCHING table .................................................... 3 Changes from Revision D (March 2009) to Revision E Page • Added devices ISO15M and ISO35M to the data sheet ....................................................................................................... 1 • Changed Description - From: The ISO15 and ISO35 are qualified for use from –40°C to 85°C. To: The ISO15M and ISO35M have extended ambient temperature ratings of –55°C to 125°C while the ISO15 and ISO35 are specified over –40°C to 85°C. .............................................................................................................................................................. 1 • Added the Product Information table .................................................................................................................................... 1 • Added Added Ambient Temp information in the RECOMMENDED OPERATING CONDITIONS table .............................. 2 • Added ISO15M and ISO35M to the Operating junction temperature in the RECOMMENDED OPERATING CONDITIONS table ............................................................................................................................................................... 2 • Changed the DRIVER ELECTRICAL table, IOZ High-impedance state output current - Test Condition VY or VZ = 12 V, VCC = 0 values From: TYP = -10 , MAX = - To: TYP = -, MAX = 90. .............................................................................. 3 • Changed the DRIVER ELECTRICAL table, IOZ High-impedance state output current - Test Condition VY or VZ = –7 V values From: TYP = -, MAX = 90 To: TYP = -10, MAX = - ............................................................................................... 3 • Added tr, tf limits for the ISO15M ans ISO35M devices ........................................................................................................ 3 • Added IA or IB limits for the ISO15M ans ISO35M devices ................................................................................................... 4 • Added pulse skew limits for the ISO15M ans ISO35M devices ........................................................................................... 4 • Added tr, tf for the ISO15M ans ISO35M devices ................................................................................................................. 4 • Added the Driver output pins Note for Figure 1 through Figure 4 ........................................................................................ 5 • Changed the Driver output pins Note for eFigure 5 through Figure 6 .................................................................................. 6 • Added Note 1 to Table 1 Driver Function Table ................................................................................................................... 9 • Added Note 1 to Table 2 Receiver Function Table .............................................................................................................. 9 • Changed Figure 19 - replaced curves ................................................................................................................................ 14 • Changed Figure 20 - replaced curves ................................................................................................................................ 14 16 Submit Documentation Feedback Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M ISO15, ISO35 ISO15M, ISO35M SLOS580F – MAY 2008 – REVISED JANUARY 2012 www.ti.com Changes from Revision E (April 2010) to Revision F Page • Changed the FEATURES From: 4000-Vpeak 560-Vpeak VIORM per IEC....Rev 2) To: 4000-VPK VIOTM, 560-VPKVIORM, IEC 60747-5-2 (VDE 0884, Rev 2) ....................................................................................................................................... 1 • Changed Description From: The symmetrical isolation......interface. To; The symmetrical isolation barrier of the device is tested to provide isolatlion of 4000 VPK per VDE and 2500 VRMS per UL and CSA between ....interface. ........... 1 • Changed CTI From: ≥175 V To: ≥400 V ............................................................................................................................. 10 • Changed the IEC Ratings table, Basic isolation group, specification from IIIa to II ........................................................... 10 • Changed the Regulatory Information Table ........................................................................................................................ 10 Copyright © 2008–2012, Texas Instruments Incorporated Product Folder Link(s): ISO15 ISO35 ISO15M ISO35M Submit Documentation Feedback 17 PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) ISO15DW ACTIVE SOIC DW 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ISO15 ISO15DWG4 ACTIVE SOIC DW 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ISO15 ISO15DWR ACTIVE SOIC DW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ISO15 ISO15DWRG4 ACTIVE SOIC DW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ISO15 ISO15MDW ACTIVE SOIC DW 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -55 to 125 ISO15M ISO15MDWR ACTIVE SOIC DW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -55 to 125 ISO15M ISO35DW ACTIVE SOIC DW 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ISO35 ISO35DWG4 ACTIVE SOIC DW 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ISO35 ISO35DWR ACTIVE SOIC DW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ISO35 ISO35DWRG4 ACTIVE SOIC DW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ISO35 ISO35MDW ACTIVE SOIC DW 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -55 to 125 ISO35M ISO35MDWR ACTIVE SOIC DW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -55 to 125 ISO35M (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 16-Aug-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant ISO15DWR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1 ISO15MDWR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1 ISO35DWR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1 ISO35MDWR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 16-Aug-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) ISO15DWR SOIC DW 16 2000 367.0 367.0 38.0 ISO15MDWR SOIC DW 16 2000 367.0 367.0 38.0 ISO35DWR SOIC DW 16 2000 367.0 367.0 38.0 ISO35MDWR SOIC DW 16 2000 367.0 367.0 38.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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