WFW9N90 Silicon N-Channel MOSFET Features ■ 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 58nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide performance, and withstand high superior energy pulse switching in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 900 V Continuous Drain Current(@Tc=25℃) 9 A Continuous Drain Current(@Tc=100℃) 5.7 A 27 A ±30 V Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 663 mJ EAR Repetitive Avalanche Energy (Note1) 15 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD Total Power Dissipation(@Tc=25℃) 150 W TJ,Tstg Junction and Storage Temperature -55~150 ℃ 300 ℃ TL Channel Temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 0.83 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 50 ℃/W Rev.A Aug.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFW9N90 Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±10 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V IDSS VDS=720V,VGS=0V - - 100 µA V(BR)DSS ID=10 mA,VGS=0V 900 - - V Gate threshold voltage VGS(th) VDS=10V,ID=1mA 3 - 5 V Drain -source ON resistance RDS(ON) VGS=10V,ID=4A - 1.1 1.35 Ω Forward Transconductance gfs VDS=15V,ID=4A 3.0 7.0 - S Input capacitance Ciss VDS=25V, - 2040 - Reverse transfer capacitance Crss VGS=0V, - 45 - Output capacitance Coss f=1MHz - 190 - VDD=400V, - 25 - ID=4A - 60 - RG=100Ω - 20 - - 95 - - 58 - - 32 - - 26 - Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Rise time tr Turn-on time ton Switching time pF ns Fall time tf Turn-off time (Note4,5) toff Total gate charge(gate-source VDD=400V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=9A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 9 A Pulse drain reverse current IDRP - - - 27 A Forward voltage(diode) VDSF IDR=9A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=9A,VGS=0V, - 1.6 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 20 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=15mH IAS=9A,VDD=90V,RG=25Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2 /7 Steady, keep you advance WFW9N90 Fig.1 On State Characteristics Fig.3 On-Resistance Variation vs ain Curr ent Dr Dra Curre ce Ch ara cte Fig.5 Capacitan Capacitanc Cha rac terristics g.2 Transfer Current Ch ara cteri sti cs Fi Fig Cha rac ris tic g.4 Body Diode Forward Volt age Fi Fig lta Variation with Source Current and ature Temper mpera arge Ch aracte Fig.6 Gate Ch Cha Cha cterristics 3 /7 Steady, keep you advance WFW9N90 ak do wn Volt age Vari ati on Fig.7 Bre Break akdo dow lta ria tio g.9 Max imum Safe Op eration Area Fi Fig aximum Ope stance Variation Fig.8 On-Resi On-Resis vs.Temperature ain Curr ent vs Fig.10 Maximum Dr Dra Curre eratu re Case Temp mpe ature 11 Transient Th ermal Re spo nse Cur ve Fig. Fig.1 The Res pon Curv 4 /7 Steady, keep you advance WFW9N90 orm Fig.12Gate Test Circuit & Wavef eform 13 Res ve Switching Test Cir cuit & Waveform Fig. g.1 esiisti tiv Circ 14 Un clamped In ducti ve Switchi ng Test Cir cuit & Waveform Fig. g.14 14Un Unc Ind tiv hin Circ 5 /7 Steady, keep you advance WFW9N90 de Re cover y dv/dt Test Circuit & Wavef orm Fig.15 Peak Dio Diod Rec ery eform 6 /7 Steady, keep you advance WFW9N90 TO-3PN Package Dimension Unit:mm 7 /7 Steady, keep you advance