CHENMKO ENTERPRISE CO.,LTD CHT5824XPT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 3 Ampere FEATURE *Surface mount package. (SC-62/SOT-89) *High speed switching *Low saturation voltage *Strong discharge power for inductive load and capacitance load SC-62/SOT-89 1.6MAX. 4.6MAX. 0.4+0.05 0.8MIN. +0.08 0.45-0.05 +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 1 1 Base 2 3 2 Collector ( Heat Sink ) C (2) CIRCUIT 4.6MAX. 2.5+0.1 1.7MAX. 3 Emitter (1) B E(3) SC-62/SOT-89 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 VCEO collector-emitter voltage open base − 60 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 3 A − 500 total power dissipation Tamb ≤ 25 °C; note 1 mW Ptot Tamb ≤ 25 °C; note 2 − 2000 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Note 1. Pw=100mS 2. Each terminal mounted on a recommended land. V 2007-06 RATING CHARACTERISTIC CURVES ( CHT5824XPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 40V,IE=0 − 1.0 uA ICEO collector cut-off current VCE=50V,IB=0 − 1.0 uA IEBO emitter cut-off current VEB=4V ,IC=0 − 1.0 uA hFE DC current gain IC = 100 mA; VCE = 2V 120 390 VCE(sat) collector-emitter saturation voltage IC = 20 00 mA; IB = 200 m A − 0.5 V Cob collector output capacitance IE = 0 ; VCB = 1 0 V; f = 1 M H Z 20(typ) − pF fT transition frequency IC = 100 mA; VCE = 1 0 V f=10MHZ 200(typ) − MHz Note : Pulse test: tp ≤ 300uSec; δ ≤ 0.02.