DC COMPONENTS CO., LTD. DC9018 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ o Absolute Maximum Ratings(TA=25 Characteristic C) Symbol Rating Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V IC 50 mA Collector Current .500 Min (12.70) Unit Base Current IB 10 mA Total Power Dissipation PD 400 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Collector-Base Breakdown Volatge BVCBO 30 - - V IC=100µA Collector-Emitter Breakdown Voltage BVCEO 15 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA ICBO - - 50 nA VCB=12V Collector Cutoff Current (1) Max Unit Test Conditions Collector-Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=10mA, IB=1mA (1) hFE 28 - 270 - IC=1mA, VCE=5V fT 700 1100 - MHz IC=5mA, VCE=5V - 1.3 1.7 pF DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Cob 380µs, Duty Cycle VCB=10V, IE=0 2% Classification of hFE Rank D E F G H I J Range 28~45 39~60 54~80 72~108 97~146 132~198 180~270