EPIGAP ELC-630-13-1

LED - Chip
ELС-630-13-1
Preliminary
10.04.2007
rev. 03/06
Radiation
Type
Technology
Electrodes
Red
Standard
AlInGaP/GaAs
P (anode) up
typ. dimensions (µm)
265
110
typ. thickness
260 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
LED-12
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
2.0
2.3
V
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Radiant power1
IF = 20 mA
Φe
1.3
mW
Radiant power2
IF = 20 mA
Φe
2.5
mW
Luminous intensity1
IF = 20 mA
IV
90
mcd
Luminous intensity2
IF = 20 mA
IV
180
mcd
Peak wavelength
IF = 20 mA
λP
Dominant wavelength
IF = 20 mA
λD
623
nm
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
16
nm
Switching time
IF = 20 mA
tr, tf
25
ns
1
2
5
V
60
624
630
636
nm
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
Labeling
Lot N°
Type
ΙV(typ) [mcd]
VF(typ) [V]
Quantity
ELС-630-13-1
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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