LED - Chip ELС-630-13-1 Preliminary 10.04.2007 rev. 03/06 Radiation Type Technology Electrodes Red Standard AlInGaP/GaAs P (anode) up typ. dimensions (µm) 265 110 typ. thickness 260 (±20) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm LED-12 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 2.0 2.3 V Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Radiant power1 IF = 20 mA Φe 1.3 mW Radiant power2 IF = 20 mA Φe 2.5 mW Luminous intensity1 IF = 20 mA IV 90 mcd Luminous intensity2 IF = 20 mA IV 180 mcd Peak wavelength IF = 20 mA λP Dominant wavelength IF = 20 mA λD 623 nm Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 16 nm Switching time IF = 20 mA tr, tf 25 ns 1 2 5 V 60 624 630 636 nm Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Lot N° Type ΙV(typ) [mcd] VF(typ) [V] Quantity ELС-630-13-1 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1