Inchange Semiconductor Product Specification 2SA1640 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For switching regulator ,driver and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB Base current -1 A PC Collector dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1640 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 -30 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ; IE=0 -30 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.1A -0.4 V VBEsat Base-emitter saturation voltage IC=-3A ;IB=-0.1A -1.0 V ICBO Collector cut-off current VCB=-30V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-0.2A ; VCE=-2V 100 Transition frequency IC=-0.5A ; VCE=-10V 20 fT CONDITIONS B MIN B B 2 TYP. MAX UNIT 300 MHz Inchange Semiconductor Product Specification 2SA1640 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3