Inchange Semiconductor Product Specification 2SD1063 Silicon NPN Power Transistors · DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Low collector saturation voltage ・Complement to type 2SB827 APPLICATIONS ・Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 7 A ICM Collector current -peak 14 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1063 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=4A; IB=0.4A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=5A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 10 MHz 0.20 μs 0.90 μs 0.30 μs Switching times ton Turn-on time tstg Storage time tf IC=2.0A; IB1=-IB2=0.2A VCC=20V;RL=10Ω Fall time hFE-1 Classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SD1063 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SD1063 Silicon NPN Power Transistors 4