Inchange Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High current ・Complement to type BD136/138/140 APPLICATIONS ・Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 半导 Absolute maximum ratings (Ta=25℃) SYMBOL 固电 VCBO PARAMETER Collector-base voltage BD135 BD137 BD139 N A H INC Collector-emitter voltage Open emitter BD137 Open base BD139 VEBO Emitter -base voltage OND EMIC GE S BD135 VCEO R O T UC CONDITIONS Open collector VALUE UNIT 45 60 V 100 45 60 V 100 5 V IC Collector current (DC) 1.5 A ICM Collector current-Peak 2 A IBM Base current-Peak 1 A Pt Total power dissipation 8 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Tamb Operating ambient temperature -65~150 ℃ VALUE UNIT Tmb≤70℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal resistance from junction to ambient 100 K/W Rth j-mb Thermal resistance from junction to mounting base 10 K/W Inchange Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE ICBO PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.5 V Base-emitter voltage IC=500mA ; VCE=2V 1.0 V VCB=30V; IE=0 100 nA VCB=30V; IE=0 Tj=125℃ 10 μA 100 nA Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=5mA ; VCE=2V 40 hFE-2 DC current gain BD135-10;BD137-10;BD139-10 BD135-16;BD137-16;BD139-16 IC=150mA ; VCE=2V 63 63 100 hFE-3 DC current gain IC=500mA ; VCE=2V 25 Transition frequency IC=50mA; VCE=5V ;f=100MHz fT TYP. 导体 半 电 固 G N A CH IN R O T UC OND IC M E ES 2 250 160 250 190 MHz Inchange Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3