ISC BD135

Inchange Semiconductor
Product Specification
BD135 BD137 BD139
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・High current
・Complement to type BD136/138/140
APPLICATIONS
・Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
体
半导
Absolute maximum ratings (Ta=25℃)
SYMBOL
固电
VCBO
PARAMETER
Collector-base voltage
BD135
BD137
BD139
N
A
H
INC
Collector-emitter voltage
Open emitter
BD137
Open base
BD139
VEBO
Emitter -base voltage
OND
EMIC
GE S
BD135
VCEO
R
O
T
UC
CONDITIONS
Open collector
VALUE
UNIT
45
60
V
100
45
60
V
100
5
V
IC
Collector current (DC)
1.5
A
ICM
Collector current-Peak
2
A
IBM
Base current-Peak
1
A
Pt
Total power dissipation
8
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Tamb
Operating ambient temperature
-65~150
℃
VALUE
UNIT
Tmb≤70℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
100
K/W
Rth j-mb
Thermal resistance from junction to mounting base
10
K/W
Inchange Semiconductor
Product Specification
BD135 BD137 BD139
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
VBE
ICBO
PARAMETER
CONDITIONS
MIN
MAX
UNIT
Collector-emitter saturation voltage
IC=0.5A; IB=50mA
0.5
V
Base-emitter voltage
IC=500mA ; VCE=2V
1.0
V
VCB=30V; IE=0
100
nA
VCB=30V; IE=0 Tj=125℃
10
μA
100
nA
Collector cut-off current
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=2V
40
hFE-2
DC current gain
BD135-10;BD137-10;BD139-10
BD135-16;BD137-16;BD139-16
IC=150mA ; VCE=2V
63
63
100
hFE-3
DC current gain
IC=500mA ; VCE=2V
25
Transition frequency
IC=50mA; VCE=5V ;f=100MHz
fT
TYP.
导体
半
电
固
G
N
A
CH
IN
R
O
T
UC
OND
IC
M
E
ES
2
250
160
250
190
MHz
Inchange Semiconductor
Product Specification
BD135 BD137 BD139
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3