Product Specification www.jmnic.com 2N6491 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2N6488 APPLICATIONS ・It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 90 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 5 A PT Total power dissipation 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case JMnic MAX UNIT 1.67 ℃/W Product Specification www.jmnic.com 2N6491 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN TYP. MAX Collector-emitter sustioning voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltge IC=5A IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=15A IB=5A 3.5 V VBE-1 Base-emitter on voltage IC=5A ; VCE=4V 1.3 V VBE-2 Base-emitter on voltage IC=15A ; VCE=4V 3.5 V ICEO Collector cut-off current VCE=40V; IB=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=5A ; VCE=4V 20 hFE-2 DC current gain IC=15A ; VCE=4V 5 JMnic 80 UNIT V 150 Product Specification www.jmnic.com 2N6491 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic