JMNIC 2SA1646

JMnic
Product Specification
2SA1646
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Fast switching speed
・Low collector saturation voltage
APPLICATIONS
・For use in switching power supplies,DC-DC
converters,motor drivers,solenoid drivers,
and other low-voltage power supply devices,
as well as for high current switching
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
-10
A
-20
A
-6
A
IC
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
PW≤300μs, duty cycle≤10%
Ta=25℃
1.5
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA1646
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat-1
Collector-emitter saturation voltage
VCEsat -2
CONDITIONS
MIN
TYP.
MAX
UNIT
IC=-6A; IB=-0.3A
-0.3
V
Collector-emitter saturation voltage
IC=-8A; IB=-0.4A
-0.5
V
VBE sat -1
Base-emitter saturation voltage
IC=-6A; IB=-0.3A
-1.2
V
VBE sat -2
Base-emitter saturation voltage
IC=-8A; IB=-0.4A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
100
hFE-2
DC current gain
IC=-2A ; VCE=-2V
100
hFE-3
DC current gain
IC=-6A ; VCE=-2V
60
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
250
pF
fT
Transition frequency
IC=-0.5A ; VCE=-10V
150
MHz
0.3
μs
1.5
μs
0.4
μs
400
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
C=-6A
; VCC=-50V
IB1=-IB2=-0.3A;RL=8.3Ω
Fall time
hFE-2 Classifications
M
L
K
100-200
150-300
200-400
2
JMnic
Product Specification
2SA1646
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3