JMNIC 2SB727K

JMnic
Product Specification
2SB727K
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・Complement to type 2SD768K
・DARLINGTON
APPLICATIONS
・For medium speed and power
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector; connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-6
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB727K
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA, RBE=∞
V(BR)EBO
Emitter-base breakdown voltage
IE=-50mA, IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=-3A ,IB=-6mA
-1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-6A ,IB=-60mA
-3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=-3A ,IB=-6mA
-2.0
V
VBEsat-2
Base-emitter saturation voltage
IC=-6A ,IB=-60mA
-3.5
V
ICBO
Collector cut-off current
VCB=-120V, IE=0
-100
μA
ICEO
Collector cut-off current
VCE=-100V, RBE=∞
-10
μA
hFE
DC current gain
IC=-3A ; VCE=-3V
-120
V
-7
V
1000
20000
Switching times
ton
Turn-on time
toff
Turn-off time
1.0
μs
3.0
μs
IC=-3A, IB1=-IB2=-6mA
2
JMnic
Product Specification
2SB727K
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SB727K
Silicon PNP Power Transistors
4