JMnic Product Specification 2SB727K Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2SD768K ・DARLINGTON APPLICATIONS ・For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -6 A ICM Collector current-peak -10 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB727K Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=∞ V(BR)EBO Emitter-base breakdown voltage IE=-50mA, IC=0 VCEsat-1 Collector-emitter saturation voltage IC=-3A ,IB=-6mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-6A ,IB=-60mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-3A ,IB=-6mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-6A ,IB=-60mA -3.5 V ICBO Collector cut-off current VCB=-120V, IE=0 -100 μA ICEO Collector cut-off current VCE=-100V, RBE=∞ -10 μA hFE DC current gain IC=-3A ; VCE=-3V -120 V -7 V 1000 20000 Switching times ton Turn-on time toff Turn-off time 1.0 μs 3.0 μs IC=-3A, IB1=-IB2=-6mA 2 JMnic Product Specification 2SB727K Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SB727K Silicon PNP Power Transistors 4