KEXIN 2SD1817

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SD1817
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
3 .8 0
+0.15
5.55 -0.15
+0.25
2.65 -0.1
0.127
max
+0.28
1.50 -0.1
+0.1
0.80-0.1
2.3
Electrical Connection
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High DC current gain.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
Collector current (pulse)
ICP
6
A
1
W
15
W
Collector dissipation
PC
Ta = 25
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = 60V , IE = 0
Emitter cutoff current
IEBO
VEB = 5V , IC = 0
DC current Gain
hFE
Min
VCE = 2V , IC = 1A
2000
VCE = 2V , IC = 2A
1000
Typ
Max
Unit
10
ìA
2.5
mA
Collector-emitter saturation voltage
VCE(sat) IC = 2A , IB = 4mA
1.5
V
Base-to-emitter saturation voltage
VBE(sat) IC = 2A , IB = 4mA
2.0
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 1mA , IE = 0
80
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 25mA , RBE =
60
V
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