Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1817 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 2.3 Electrical Connection +0.15 0.50 -0.15 +0.2 9.70 -0.2 High DC current gain. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Collector current (pulse) ICP 6 A 1 W 15 W Collector dissipation PC Ta = 25 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 60V , IE = 0 Emitter cutoff current IEBO VEB = 5V , IC = 0 DC current Gain hFE Min VCE = 2V , IC = 1A 2000 VCE = 2V , IC = 2A 1000 Typ Max Unit 10 ìA 2.5 mA Collector-emitter saturation voltage VCE(sat) IC = 2A , IB = 4mA 1.5 V Base-to-emitter saturation voltage VBE(sat) IC = 2A , IB = 4mA 2.0 V Collector-to-base breakdown voltage V(BR)CBO IC = 1mA , IE = 0 80 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 25mA , RBE = 60 V www.kexin.com.cn 1