KEXIN 2SK3628

Transistors
IC
SMD Type
Silicon N-channel Power MOSFET
2SK3628
TO-263
1 .2 7 -0+ 0.1.1
Features
High-speed switching
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Avalanche energy capability guaranteed
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
No secondary breakdown
5 .6 0
Low ON resistance Ron
+0.2
0.4-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
230
V
Gate-source surrender voltage
VGSS
30
V
Drain current
ID
20
A
Peak drain current
IDP
80
A
Avalanche energy capability
EAS
570
mJ
Power dissipation Ta = 25
PD
Power dissipation
3
W
100
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
2SK3628
Electrical Characteristics Ta = 25
Parameter
Testconditons
Gate-drain surrender voltage
VDSS
ID = 1 mA, VGS = 0
Diode forward voltage
VDSF
IDR = 20 A, VGS = 0
Gate threshold voltage
Vth
VDS = 25 V, ID = 1 mA
Drain-source cutoff current
IDSS
VDS = 184 V, VGS = 0
IGSS
VGS =
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Yfs
V
1.7
65
7
Unit
14
-1.5
V
3.7
V
100
ìA
1
ìA
85
mÙ
S
pF
pF
30
pF
100 V, ID = 15 A
35
ns
RL = 6.7 Ù, VGS = 10 V
26
ns
td(off)
220
ns
tf
36
ns
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
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230
30 V, VDS = 0
VDS = 25 V, ID = 10 A
Max
330
Coss
Fall time
Typ
2300
Ciss
Short-circuit output capacitance
Turn-off delay time
Min
RDS(on) VGS = 10 V, ID = 10 A
Short-circuit forward transfer capacitance
Rise time
2
Symbol
tr
VDS = 25 V, VGS = 0, f = 1 MHz
VDD