MOSFET IC SMD Type Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection KI6968BEDQ(SI6968BEDQ) TSSOP-8 Unit: mm Features VDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5A VDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5A N-Channel N-Channel * Typical value by design Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current* TA = 25 ID TA = 70 Pulsed Drain Current 10 secs Maximum Power Dissipation IS TA = 25 PD TA = 70 Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient* t 10 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) * Surface Mounted on FR4 Board, t Steady-State RthJF V 6.5 5.2 5.5 3.5 30 1.5 1.0 1.5 1.0 0.96 0.64 A W -55 to 150 TJ, Tstg Symbol Unit 12 IDM Continuous Source Current * Steady State 20 Typ Max 72 83 100 120 55 70 Unit /W 10 sec. www.kexin.com.cn 1 IC MOSFET SMD Type KI6968BEDQ(SI6968BEDQ) Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain-Source On-State Resistance rDS(on) Forward Transconductance* Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time * Pulse test; pulse width www.kexin.com.cn VDS = 0 V, VGS = 300 s, duty cycle VSD 2%. Min Typ 0.6 4.5 V Max Unit 1.6 V 200 VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 70 25 VDS 5 V, VGS = 4.5 V 30 nA A A A VGS = 4.5 V, ID = 6.5 A 0.0165 0.022 VGS = 2.5 V, ID = 5.5 A 0.023 0.030 VDS = 10 V, ID = 6.5 A 30 VDS = 10V, VGS = 4.5V, ID = 6.5A 2.2 nC 3.6 nC 12 S 18 nC 245 365 ns VDD = 10 V, RL = 10 330 495 ns ID = 1 A, VGEN = 4.5V, RG = 6 860 1300 ns 510 765 ns IS = 1.5 A, VGS = 0 V 0.71 1.2 V tf Schottky Diode Forward Voltage* 2 gfs Testconditons VDS = VGS, ID = 250 ìA