KEXIN KI6968BEDQ

MOSFET
IC
SMD Type
Dual N-Channel 2.5-V (G-S) MOSFET
Common Drain, ESD Protection
KI6968BEDQ(SI6968BEDQ)
TSSOP-8
Unit: mm
Features
VDS=20V,rDS(on)=0.022
@VGS=4.5V,ID=6.5A
VDS=20V,rDS(on)=0.030
@VGS=2.5V,ID=5.5A
N-Channel
N-Channel
* Typical value by design
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current*
TA = 25
ID
TA = 70
Pulsed Drain Current
10 secs
Maximum Power Dissipation
IS
TA = 25
PD
TA = 70
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient*
t
10 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
* Surface Mounted on FR4 Board, t
Steady-State
RthJF
V
6.5
5.2
5.5
3.5
30
1.5
1.0
1.5
1.0
0.96
0.64
A
W
-55 to 150
TJ, Tstg
Symbol
Unit
12
IDM
Continuous Source Current *
Steady State
20
Typ
Max
72
83
100
120
55
70
Unit
/W
10 sec.
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1
IC
MOSFET
SMD Type
KI6968BEDQ(SI6968BEDQ)
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current*
ID(on)
Drain-Source On-State Resistance
rDS(on)
Forward Transconductance*
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
* Pulse test; pulse width
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VDS = 0 V, VGS =
300 s, duty cycle
VSD
2%.
Min
Typ
0.6
4.5 V
Max
Unit
1.6
V
200
VDS = 16 V, VGS = 0 V
1
VDS = 16 V, VGS = 0 V, TJ = 70
25
VDS
5 V, VGS = 4.5 V
30
nA
A
A
A
VGS = 4.5 V, ID = 6.5 A
0.0165
0.022
VGS = 2.5 V, ID = 5.5 A
0.023
0.030
VDS = 10 V, ID = 6.5 A
30
VDS = 10V, VGS = 4.5V, ID = 6.5A
2.2
nC
3.6
nC
12
S
18
nC
245
365
ns
VDD = 10 V, RL = 10
330
495
ns
ID = 1 A, VGEN = 4.5V, RG = 6
860
1300
ns
510
765
ns
IS = 1.5 A, VGS = 0 V
0.71
1.2
V
tf
Schottky Diode Forward Voltage*
2
gfs
Testconditons
VDS = VGS, ID = 250 ìA