DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1912 features a low on-state resistance and excellent 2.8 ±0.2 switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0.16+0.1 –0.06 FEATURES 6 5 4 1 2 3 1.5 The µPA1912 is a switching device which can be driven directly by a 2.5-V power source. 0 to 0.1 • Can be driven by a 2.5-V power source • Low on-state resistance 0.95 RDS(on)1 = 50 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) 1.9 RDS(on)2 = 52 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A) 2.9 ±0.2 RDS(on)3 = 70 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A) 0.65 0.95 0.9 to 1.1 1, 2, 5, 6 : Drain 3 : Gate 4 : Source ORDERING INFORMATION PART NUMBER PACKAGE µPA1912TE 6-pin Mini Mold (Thin Type) EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS –12 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID(DC) ±4.5 A ID(pulse) ±18 A Gate Protection Diode PT1 0.2 W Marking: TD PT2 2 W Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Body Diode Gate Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13806EJ2V0DS00 (2nd edition) Date Published July 1999 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1998, 1999 µ PA1912 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –12 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = ±10 V, VDS = 0 V ±10 µA VGS(off) VDS = –10 V, ID = –1 mA –0.5 –0.90 –1.5 V | yfs | VDS = –10 V, ID = –2.5 A 3 9.3 RDS(on)1 VGS = –4.5 V, ID = –2.5 A 39 50 mΩ RDS(on)2 VGS = –4.0 V, ID = –2.5 A 40 52 mΩ RDS(on)3 VGS = –2.5 V, ID = –2.5 A 53 70 mΩ Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = –10 V 810 pF Output Capacitance Coss VGS = 0 V 241 pF Reverse Transfer Capacitance Crss f = 1 MHz 122 pF Turn-on Delay Time td(on) VDD = –6 V 304 ns tr ID = –2.5 A 532 ns VGS(on) = –4.0 V 406 ns RG = 10 Ω 796 ns Rise Time Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = –10 V 5.6 nC Gate to Source Charge QGS ID = –4.5 A 2.2 nC Gate to Drain Charge QGD VGS = –4.0 V 2.6 nC Diode Forward Voltage VF(S-D) IF = 4.5 A, VGS = 0 V 0.86 V Reverse Recovery Time trr IF = 4.5 A, VGS = 0 V 1.1 µs Reverse Recovery Charge Qrr di/dt = 10 A / µs 4.3 µC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % 10 % 0 10 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % td(off) tf toff Data Sheet D13806EJ2V0DS00 µ PA1912 TYPICAL CHARCTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA −100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 d ite im V) ) L .5 4 on S( = − RD GS −10 (V −1 30 60 90 120 −0.1 150 −1 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −100 FORWARD TRANSFER CHARACTERISTICS −20 −100 VGS = −4.5 V VDS = −10 V −10 VGS = −4.0 V −12 VGS = −2.5 V −8 −4 ID - Drain Current - A −16 −10 VDS - Drain to Source Voltage - V TA - Ambient Temperature - ˚C TA = 125˚C 75˚C −1 −0.1 TA = 25˚C −25˚C −0.01 −0.001 −0.0001 −0.2 0 −0.4 −0.6 −0.8 −1.0 −0.00001 −1.0 0 −2.0 −3.0 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT −1.5 VDS = −10 V ID = −1 mA −1.0 −0.5 −50 0 50 100 150 | yfs | - Forward Transfer Admittance - S ID - Drain Current - A ID(DC) 20 0 VGS(off) - Gate to Source Cut-off Voltage - V Single Pulse Mounted on 250mm2 x 35µm copper pad connected to drain electrode in 50mm x 50mm x 1.6mm FR-4 board. ID(pulse) PW =1 m s PW =1 0 PW m s =1 00 PW m =5 s s 100 10 VDS = −10 V TA = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.01 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A Tch - Channel Temperature - ˚C Data Sheet D13806EJ2V0DS00 3 120 VGS = −2.5 V 100 80 TA =125 °C TA = 75 °C 60 TA = 25 °C TA =−25°C 40 −0.01 60 −0.1 −1 −10 −100 TA =125 °C TA = 25 °C −0.1 −1 −10 −100 TA = 75 °C 40 TA = 25 °C TA =−25°C 30 −0.01 −0.1 −1 −10 100 80 60 40 20 −2 −4 −6 −8 −10 VGS =−2.5 V 60 VGS =−4.0 V 50 VGS =−4.5 V 40 30 −50 0 50 100 150 Tch - Channel Temperature - °C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 ID = −2.5 A 10000 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 4 TA =125 °C 50 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 70 ID = −2.5 A ID - Drain Current - A 0 VGS = −4.0 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT TA =−25°C 30 −0.01 60 ID - Drain Current - A TA = 75 °C 40 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A VGS = −4.5 V 50 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1912 f = 1 MHz VGS = 0 V 1000 Ciss Coss Crss 100 10 −0.1 VGS - Gate to Source Voltage - V −1.0 −10 VDS - Drain to Source Voltage - V Data Sheet D13806EJ2V0DS00 −100 µ PA1912 ★ SOURCE TO DRAIN DIODE FORWARD VOLTAGE SWITCHING CHARACTERISTICS IF(S-D) - Diode Forward Current - A 100 1000 tf tr td(off) td(on) 100 10 −0.1 VDD = −6 V VGS(on) = −4.0 V RG = 10 Ω −1 10 1 0.1 0.01 0.4 −10 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V ID - Drain Current - A DYNAMIC INPUT CHARACTERISTICS −8 ID = −4.5 A −6 VDD = −10 V −6 V −4 −2 0 2 4 6 8 10 QG - Total Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 10000 Single Pulse Without Board 100 Mounted on 250mm2×35µm copper pad connected to drain electrode in 50mm×50mm×1.6mm FR-4 board 10 1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet D13806EJ2V0DS00 5 µ PA1912 [MEMO] 6 Data Sheet D13806EJ2V0DS00 µ PA1912 [MEMO] Data Sheet D13806EJ2V0DS00 7 µ PA1912 • The information in this document is subject to change without notice. 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