SavantIC Semiconductor Product Specification BDT65C Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDT64C APPLICATIONS ·For audio output stages and general purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 12 A PT Total power dissipation 125 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification BDT65C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=30mA, IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A ,IB=20mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A ,IB=100mA 3.0 V VBE Base-emitter on voltage IC=5A ; VCE=4V 2.5 V ICBO Collector cut-off current VCB=120V, IE=0 VCB=60V, IE=0;Tj=150 0.4 2.0 mA ICEO Collector cut-off current VCE=60V, IB=0 0.2 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=1A ; VCE=4V hFE-2 DC current gain IC=5A ; VCE=4V hFE-3 DC current gain IC=12A ; VCE=4V VF-1 Forward diode voltage IF=5A 2.0 V VF-2 Forward diode voltage IF=12A 2.0 V CC Collector capacitance IE=0 ; VCB=10V;f=1MHz 200 pF ton Turn-on time 120 UNIT V 1500 1000 1000 1.0 2.5 µs 6.0 10 µs IC=5A ,IBon=-IBoff=20mA toff Turn-off time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDT65C