2SC2412 NPN Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free FEATURES A Low Cob. n Cob=2.0pF 3 Compements the 2SA1037K n SOT-23 L n 1 Top View B S 2 RoHS Compliant Product n V G STRUCTURE n n C Expitaxial planar type NPN Silicon Teansistor H D J K Collector Base Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm Emitter !Absolute maximum (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 0.15 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C Parameter !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 60 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA Collector cutoff current ICBO − − 0.1 µA VCB=60V Emitter cutoff current IEBO − − 0.1 µA VEB=7V DC current transfer ratio hFE 120 − 560 − VCE=6V, IC=1mA VCE(sat) − − 0.4 V IC/IB=50mA/5mA Transition frequency fT − 180 − MHz Output capacitance Cob − 2 3.5 pF Collector-emitter saturation voltage Conditions VCE=12V, IE=−2mA, f=100MHz VCE=12V, IE=0A, f=1MHz hFE values are classified as follows : Item Q R S hFE 120~270 180~390 270~560 Marking BQ BR BS http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2SC2412 Elektronische Bauelemente NPN Silicon General Purpose Transistor Typical Characteristics http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SC2412 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Silicon General Purpose Transistor Any changing of specification will not be informed individual Page 3 of 3