SMG702 500mA, 60V,RDS(ON) 4.5Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SC-59 A Description L The SMG702 is universally used for all commercial industrial surface mount application. S 2 3 Top View B 1 D Marking : 702 - D G J C G K H Drain S Gate Symbol Parameter Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Source o Absolute Maximum Ratings at TA = 25 C Dim Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage Continuous Non-repetitive (tp ≦ 50us) VGS ±20 V VGSM ±40 V Continuous Drain Current ID 500 mA Pulsed Drain Current (Pulse width≦300us, dutycycle≦2%) IDM 800 mA Total Power Dissipation PD 225 mW RthJA 556 W/ C Thermal Resistance,Junction-to-Ambient o C -55~+150 Tj, Tstg Operating Junction and Storage Temperature Range o o Electrical Characteristics( Tj = 25 C Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit _ V VGS=0V, ID=250uA 2.5 V VDS=2.5V, ID =0.25mA Test Condition Drain-Source Breakdown Voltage BVDSS 60 _ Gat Thershold Voltage VGS(th) 1 _ Gate-Source Leakage Current IGSS _ _ ± 100 nA VGS=± 20V, VDS=0 Zero Gate Voltage Drain Current IDSS _ _ 1 uA VDS=60V,VGS=0 On-State Drain Current ID(ON) 500 _ _ mA _ _ 5 StaticDrain-Source On-Resistance Input Capacitance Output Capacitance RDS(ON) Ciss Coss _ _ 4.5 _ _ 50 _ _ 25 _ _ Reverse Transfer Capacitance Crss _ Forward Transconductance Gfs 80 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A VDS=7.5V,VGS=10V ID =50mA,VGS=5V Ω ID =500mA, VGS=10V pF VGS=0V VDS=25V mS VDS>2 VDS(ON), ID=200mA f=1.0MHz 5 _ Any changing of specification will not be informed individual Page 1 of 3 SMG702 Elektronische Bauelemente 500mA, 60V,RDS(ON) 4.5Ω N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 SMG702 Elektronische Bauelemente 500mA, 60V,RDS(ON) 4.5Ω N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3