2 2SD788 !! S Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm For stroboscope 5.0±0.2 4.0±0.2 C 5.1±0.2 B ■ Features 0.7±0.2 A • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. E G D J ■ Absolute Maximum Ratings Ta = 25°C N 12.9±0.5 0.7±0.1 K Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 20 V 0.45+0.15 –0.1 H 2.5+0.6 –0.2 VCEO 20 V Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 2 A Peak collector current ICP 6 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3 2 3 C 2 M L 1 1 2.3±0.2 Collector-emitter voltage (Base open) 2.5+0.6 –0.2 F F DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 1.00 E 1.27 F G +0.15 0.85 0.45–0.1 0.45 H 14.00 + 0.50 J 0.55 MAX K 2.30 L M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE 1: Emitter 2: Collector 3: Base TO-92 Package TO-92 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 6 V Collector-base cutoff current (Emitter open) ICBO VCB = 16 V, IE = 0 2 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 1 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 µA Forward current transfer ratio hFE1 Collector-emitter saturation voltage Transition frequency RANK RANGE Min VCE = 2 V, IC = 0.1A 100 hFE2 VCE = 2 V, IC = 1 A 150 VCE(sat) IC = 1 A, IB = 0.1 A fT Collector output capacitance (Common base, input open circuited) Note) 1. Rank classification 2. CLASSIFICATION OF * Conditions Cob Typ Max Unit 700 0.3 V VCB = 2 V, IC = 1 0 mA 100 MHz VCB = 10 V, IE = 0, f = 1 MHz 20 PF hFE2 A 100-300 .....B 250-500 ....C 400-700 1 2SD788 Silicon NPN epitaxial planar type Typical Output Characteristics 100 1.2 0.3 Collector Current IC (mA) Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve 0.8 0.4 80 0.25 60 0.2 0.15 40 0.1 0.05 mA 20 IB = 0 50 100 Ambient Temperature Ta (°C) 0 150 2 4 6 8 10 Collector to Emitter Voltage VCE (V) 0 Typical Transfer Characteristics Typical Output Characteristics 20 1,000 15 1.6 Collector Current IC (mA) Collector Current IC (A) 2.0 10 5 mA 1.2 0.8 PC =0 .9 W 0.4 IB = 0 Pulse VCE = 2 V 3,000 Ta = 75°C 25 1,000 300 –25 100 30 10 1 3 10 30 100 300 Collector Current IC (mA) 1,000 Ta = 75°C 30 25 10 –25 3 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 Saturation Voltage vs. Collector Current Base to Emitter Saturation Voltage VBE(sat) (V) DC Current Transfer Ratio hFE 10,000 Collector to Emitter Saturation Voltage VCE(sat) (V) DC Current Transfer Ratio vs. Collector Current VCE = 2 V 100 1 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage VCE (V) 0 300 3.0 VBE(sat) 1.0 0.3 IC = 10 IB 0.1 0.03 VCE(sat) 0.01 0.003 3 10 30 100 300 1,000 3,000 Collector Current IC (mA) 2