Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For low-frequency output amplification Complementary to 2SD1295 2.3±0.1 1 2 1:Base 2:Collector 3:Emitter U Type Package 3 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –40 V Emitter to base voltage VEBO –5 V Peak collector current ICP –3 A Collector current IC –1.5 A Collector power dissipation (TC=25°C) PC 20 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Unit: mm 6.5±0.2 5.35 4.35 0.75 2.3 2.3 0.6 0.5±0.1 1 ■ Electrical Characteristics 2 3 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) (TC=25˚C) Parameter Symbol ICBO Collector cutoff current 0.8max 2.3±0.1 4.6±0.1 1.8 ■ Absolute Maximum Ratings 0.5±0.1 0.75±0.1 5.5±0.2 13.3±0.3 ● 1.0±0.1 0.1±0.05 0.93±0.1 6.0 ● Possible to solder the radiation fin directly to printed cicuit board High collector to emitter VCEO Large collector power dissipation PC 2.3±0.1 ● 2.5±0.1 ■ Features 1.0±0.2 1.8±0.1 7.3±0.1 0.5±0.1 max Unit VCB = –20V, IE = 0 Conditions min typ –1 µA ICEO VCE = –10V, IB = 0 –100 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 –10 µA Collector to base voltage VCBO IC = –1mA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –40 V VCE = –5V, IC = –1A 50 * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –1.5A, IB = – 0.15A Base to emitter saturation voltage VBE(sat) IC = –2A, IB = – 0.2A Transition frequency fT VCB = –5V, IE = 0.5A, f = 200MHz 150 MHz Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz 45 pF *h FE 220 –1 –1.5 V V Rank classification Rank P Q R hFE 50 to 100 80 to 160 120 to 220 1 Power Transistors 2SB968 IC — VCE 28 VCE(sat) — IC TC=25˚C IB=–40mA TC=Ta –3.5 –35mA Collector current IC (A) Collector power dissipation PC (W) –4.0 24 20 16 12 8 4 –30mA –3.0 –25mA –2.5 –20mA –2.0 –15mA –1.5 –10mA –1.0 –5mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) IC/IB=10 –10 –3 –1 – 0.3 TC=100˚C – 0.1 25˚C –25˚C – 0.03 – 0.5 0 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 32 –2 –4 –6 –8 –10 – 0.01 – 0.01 – 0.03 Collector to emitter voltage VCE (V) VBE(sat) — IC – 0.1 – 0.3 hFE — IC TC=–25˚C –1 100˚C – 0.3 25˚C – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 30 10 3 1 – 0.01 – 0.03 –3 Cob — VCB – 0.3 –1 80 40 30 90 60 30 –30 –100 Collector to base voltage VCB (V) 100 300 1000 3000 10000 Emitter current IE (mA) ICEO — Ta 1000 VCE=–12V TC=25˚C –100 300 ICEO (Ta) ICEO (Ta=25˚C) 120 –10 120 VCER — RBE IE=0 f=1MHz TC=25˚C –3 160 0 10 –3 –120 Collector to emitter voltage VCER (V) Collector output capacitance Cob (pF) – 0.1 200 Collector current IC (A) 150 2 25˚C –25˚C 100 Collector current IC (A) 0 –1 TC=100˚C 300 Transition frequency fT (MHz) –3 VCB=–5V f=200MHz TC=25˚C VCE=–5V 1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –80 –60 –40 –20 0 0.001 –3 fT — IE 240 –10 –1 Collector current IC (A) 100 30 10 3 1 0.01 0.1 1 10 Base to emitter resistance RBE (kΩ) 0 20 40 60 80 100 120 Ambient temperature Ta (˚C) Power Transistors 2SB968 Area of safe operation (ASO) –10 Collector current IC (A) –3 –1 ICP Single pulse TC=25˚C IC t=1ms – 0.3 1s – 0.1 – 0.03 – 0.01 – 0.003 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3