DC COMPONENTS CO., LTD. DC8550S DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -25 - - V Collector-Emitter Breakdown Voltage BVCEO -20 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) (1) (1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IC=-10µA ICBO - - -1 µA VCB=-20V VCE(sat) - - -0.6 V IC=-0.5A, IB=-50mA VBE(on) - - -1 V IC=-150mA, VCE=-1V hFE1 85 - 500 - IC=-150mA, VCE=-1V hFE2 - 170 - - IC=-500mA, VCE=-1V fT 150 - - MHz - - 10 pF Cob 380µs, Duty Cycle 2% Classification of hFE1 Rank B C D E Range 85~160 100~200 150~300 250~500 IC=-20mA, VCE=-10V, f=100MHz VCB=-10V, f=1MHz RATING AND CHARACTERISTIC CURVES OF DC8550S FIG.1 - Current Gain & Collector Current FIG.2 - Saturation Voltage & Collector Current 1 1000 Saturation Voltage (V) VCE=1V hFE 100 10 0.1 VCE(sat) @ IC=10IB 1 0.001 0.01 0.01 0.1 1 10 100 1000 0.01 0.1 1 Collector Current (mA) 10 100 1000 Collector Current (mA) FIG.3 - On Voltage & Collector Current FIG.4 - Cutoff Frequency & Collector Current 1000 1 Cutoff Frequency (MHz) VCE=10V On Voltage (V) VBE(ON) @ VCE=1V 100 10 0.1 1 0.01 0.1 1 10 100 1 1000 10 100 1000 Collector Current (mA) Collector Current (mA) FIG.5 - Capacitance & Reverse-Biased Voltage FIG.6 - PD-Ta 100 700 10 Power Dissipation-PD(mW) Capacitance (pF) 600 Cob 500 400 300 200 100 0 1 0.1 1 10 100 0 20 Reverse-Biased Voltage (V) DC COMPONENTS CO., LTD. R 40 60 80 100 120 o Ambient Temperature-Ta( C) 140 160