DC COMPONENTS CO., LTD. LB122T DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Description Designed for use in medium power switching applications. TO-126 Pinning .304(7.72) .285(7.52) 1 = Emitter 2 = Collector 3 = Base .105(2.66) .095(2.41) .041(1.05) .037(0.95) .154(3.91) .150(3.81) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 800 mA Collector Current (pulse) IC 1600 mA Base Current (DC) IB 100 mA Base Current (pulse) IB 200 mA Total Power Dissipation(TC=25 C) PD 20 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .152(3.86) .138(3.50) .055(1.39) .045(1.14) .279(7.09) .275(6.99) o 1 3 Typ 2 3 .052(1.32) .048(1.22) o 3 Typ .620(15.75) .600(15.25) .022 (0.55) Typ .032(0.81) .028(0.71) .189(4.80) .171(4.34) C o 3 Typ o 3 Typ Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO 600 - - V Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA Emitter-Base Breakdown Voltage BVEBO 6 - - V IE=10µA Collector Cutoff Current (1) Base-Emitter Saturation Voltage - - 10 µA VCB=600V - - 10 µA VCE=400V IEBO - - 10 µA VEB=6V - - 0.4 V IC=100mA, IB=20mA VCE(sat)2 - - 0.8 V IC=300mA, IB=60mA VBE(sat) - - 1 V IC=100mA, IB=20mA hFE1 10 - 40 - IC=0.1A, VCE=10V hFE2 10 - - - - - 0.6 µS DC Current Gain(1) Turn-Off Time (1)Pulse Test: Pulse Width ICBO ICEO VCE(sat)1 Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Test Conditions IC=100µA Toff 380µs, Duty Cycle 2% Classification of hFE1 Rank B1 B2 B3 B4 B5 B6 Range 10~17 13~22 18~27 23~32 28~37 33~40 IC=0.5A, VCE=10V IC=0.3A, VCC=100V, IB1=-IB2=0.06A