DC COMPONENTS CO., LTD. LB125E DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for lighting applications and switch mode power supplies. TO-220AB Pinning .405(10.28) .380(9.66) 1 = Base 2 = Collector 3 = Emitter .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current(DC) IC 5 A Collector Current(Pluse) IC 8 A Total Power Dissipation(TC=25 C) PD 40 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .625(15.87) .570(14.48) .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 600 - - V Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 9 - - V IE=10mA, IC=0 Collector Cutoff Current Collector-Emitter Saturation Voltage(1) (1)Pulse Test: Pulse Width ICBO - - 100 µA VCB=800V, IE=0 ICEO - - 100 µA VCE=400V, IB=0 VCE(sat)1 - - 0.5 V IC=1A, IB=0.2A VCE(sat)2 - - 0.7 V IC=2A, IB=0.4A VCE(sat)3 - - 1.1 V IC=3A, IB=0.75A VBE(sat)1 - - 1.1 V IC=1A, IB=0.2A VBE(sat)2 - - 1.2 V IC=2A, IB=0.4A hFE1 8 - 35 - IC=2A, VCE=5V hFE2 10 380µs, Duty Cycle 2% - - - IC=10mA, VCE=5V Base-Emitter Saturation Voltage(1) DC Current Gain(1) Test Conditions IC=1mA, IE=0 Classification of hFE1 Rank B1 B2 Range 8~17 15~21 B3 19~25 B4 B5 23~31 29~35