DC COMPONENTS CO., LTD. SC5094 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low noise amplifier at VHF, UHF and CATV band. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Symbol Rating Collector-Base Voltage Characteristic VCBO 18 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 2.5 V .091(2.30) .067(1.70) Unit Collector Current IC 20 mA Total Power Dissipation PD 150 mW Junction Temperature TJ +125 o Storage Temperature TSTG -50 to +125 o .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions Collector Cutoff Current ICBO - - 1 µA VCB=3V Emitter Cutoff Current IEBO - - 1 µA VEB=1V DC Current Gain(1) hFE 50 80 160 - IC=1mA, VCE=2V - 7.6 - GHz IC=10mA, VCE=1V - 9 - GHz IC=12mA, VCE=3V Transition Frequency fT Minimum Noise Figure NFmin Associated Gain GA 2 Insertion Gain S21 in 50Ω system (1)Pulse Test: Pulse Width S21 2 380µs, Duty Cycle 2% - 1.4 - dB IC=4.2mA, VCE=2V, f=0.9GHz - 1.6 - dB IC=4.5mA, VCE=5V, f=0.9GHz - 12 - dB IC=4.2mA, VCE=2V, f=0.9GHz - 13.5 - dB IC=4.5mA, VCE=5V, f=0.9GHz - 12.8 - dB IC=4.2mA, VCE=2V, f=0.9GHz - 13.5 - dB IC=4.5mA, VCE=5V, f=0.9GHz