PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20(℃) 125 150 100 175 500V / 18A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY18N50W 500V, RDS(ON)=0.32W@VGS=10V, ID=9A Features TO-3PN • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives Mechanical Information 2 Drain 3 Source 1 1 • Case: TO-3PN Molded Plastic Gate 2 • Terminals : Solderable per MIL-STD-750,Method 2026 3 Marking & Ordering Information TYPE MARKING PACKAGE PACKING HY18N50W 18N50W TO-3PN 30PCS/TUBE Absolute Maximum Ratings (TC=25°C unless otherwise specified ) Parameter Symbol Value Units Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS +30 V ID 18 A IDM 72 A PD 200 1.6 W EAS 1050 mJ TJ, TSTG -55 to +150 ℃ Symbol Value Units Junction-to-Case Thermal Resistance RqJC 0.62 ℃/W Junction-to-Ambient Thermal Resistance RqJA 40 ℃/W Continuous Drain Current TC=25℃ Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse L=30mH, IAS=8.6A, VDS=140V Operating Junction and Storage Temperature Range Note : 1. Maximum DC current limited by the package Thermal Characteristics Parameter COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV. 1, 11-Jan-2012 PAGE.1 HY18N50W Electrical Characteristics ( TC=25, Unless otherwise noted ) Paramter Symbol Test Condition Min. Typ. Max. Units Drain-Source Breakdown Voltage BVDSS VGS=0V、ID=250uA 500 - - V Gate Threshold Voltage VGS(th) VDS=VGS、ID=250uA 2 - 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V、ID=9A - 0.26 0.32 W Zero Gate Voltage Drain Current IDSS VDS=500V、VGS=0V - - 1.0 uA Gate Body Leakage Current IGSS VGS=+30V、VDS=0V - - +100 nA - 52.2 - - 10.8 - Static Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 14.8 - Turn-On Delay Time td(on) - 21.8 32 - 36.8 46 - 88.2 112 - 46 66 - 2250 2650 - 320 420 - 7.4 12 Turn-On Rise Time Turn-Off Delay Time tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=400V、ID=18A VGS=10V VDD=250V、ID=18A VGS=10V、RG=25W VDS=25V、VGS=0V f=1.0MHZ nC ns pF Source-Drain Diode Max. Diode Forwad Voltage IS - - - 18 A Max. Pulsed Source Current ISM - - - 72 A Diode Forward Voltage VSD IS=18A、VGS=0V - - 1.5 V Reverse Recovery Time trr - 480 - ns Reverse Recovery Charge Qrr VGS=0V、IS=18A di/dt=100A/us - 4.5 - uC NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2% REV. 1, 11-Jan-2012 PAGE.2 HY18N50W Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 100 VGS= 20V~ 8.0V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 50 40 7.0V 30 6.0V 20 10 5.0V 0 VDS =50V 10 TJ = 125oC -55oC 0 0 10 20 30 40 50 1 VDS - Drain-to-Source Voltage (V) 3 4 5 6 7 8 9 10 Fig.2 Transfer Characteristric 2 RDS(ON) - On Resistance(W) 0.6 RDS(ON) - On Resistance(W) 2 VGS - Gate-to-Source Voltage (V) Fig.1 Output Characteristric 0.5 0.4 VGS=10V 0.3 VGS = 20V 0.2 0.1 ID =9.0A 1.5 1 0.5 0 0 0 4 8 12 16 3 20 4 5 6 7 8 9 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Fig.3 On-Resistance vs Drain Current Fig.4 On-Resistance vs Gate to Source Voltage 4000 12 f = 1MHz VGS = 0V VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 25oC 1 3000 Ciss 2000 Coss 1000 Crss 0 ID =18A 10 VDS=400V VDS=250V VDS=100V 8 6 4 2 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic REV. 1, 11-Jan-2012 30 0 10 20 30 40 50 60 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic PAGE.3 HY18N50W Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 1.2 VGS =10 V ID =9.0A BVDSS - Breakdown Voltage (Normalized) RDS(ON) - On-Resistance (Normalized) 2.5 2.1 1.7 1.3 0.9 0.5 ID = 250mA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 TJ - Junction Temperature TJ - Junction Temperature (oC) Fig.7 On-Resistance vs Junction Temperature 125 150 (oC) Fig.8 Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) VGS = 0V 10 TJ = 125oC 25oC 1 -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.9 Body Diode Forward Voltage Characteristic REV. 1, 11-Jan-2012 PAGE.4