HY HY18N50W

PHASE
WAVE 60Hz DERATING
1 –50
FORWARD
CURVE
AMBIENT
1FIG.
25TSINGLE
4 TEMPERATURE
75HALFCURRENT
10
100 20(℃)
125 150
100
175
500V / 18A
N-Channel Enhancement Mode MOSFET
FIG.
–2MAXIMUM
10 2SINGLE
5NON10
0.0
0.2
0.4 0.6
HY18N50W
500V, RDS(ON)[email protected]=10V, ID=9A
Features
TO-3PN
• Low On-State Resistance
• Fast Switching
• Low Gate Charge & Low CRSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
2
Drain
3
Source
1
1
• Case: TO-3PN Molded Plastic
Gate
2
• Terminals : Solderable per MIL-STD-750,Method 2026
3
Marking & Ordering Information
TYPE
MARKING
PACKAGE
PACKING
HY18N50W
18N50W
TO-3PN
30PCS/TUBE
Absolute Maximum Ratings (TC=25°C unless otherwise specified )
Parameter
Symbol
Value
Units
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
+30
V
ID
18
A
IDM
72
A
PD
200
1.6
W
EAS
1050
mJ
TJ, TSTG
-55 to +150
℃
Symbol
Value
Units
Junction-to-Case Thermal Resistance
RqJC
0.62
℃/W
Junction-to-Ambient Thermal Resistance
RqJA
40
℃/W
Continuous Drain Current
TC=25℃
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TC=25℃
Avalanche Energy with Single Pulse
L=30mH, IAS=8.6A, VDS=140V
Operating Junction and Storage Temperature Range
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV. 1, 11-Jan-2012
PAGE.1
HY18N50W
Electrical Characteristics ( TC=25, Unless otherwise noted )
Paramter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
BVDSS
VGS=0V、ID=250uA
500
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS、ID=250uA
2
-
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V、ID=9A
-
0.26
0.32
W
Zero Gate Voltage Drain Current
IDSS
VDS=500V、VGS=0V
-
-
1.0
uA
Gate Body Leakage Current
IGSS
VGS=+30V、VDS=0V
-
-
+100
nA
-
52.2
-
-
10.8
-
Static
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
14.8
-
Turn-On Delay Time
td(on)
-
21.8
32
-
36.8
46
-
88.2
112
-
46
66
-
2250
2650
-
320
420
-
7.4
12
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=400V、ID=18A
VGS=10V
VDD=250V、ID=18A
VGS=10V、RG=25W
VDS=25V、VGS=0V
f=1.0MHZ
nC
ns
pF
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
-
-
18
A
Max. Pulsed Source Current
ISM
-
-
-
72
A
Diode Forward Voltage
VSD
IS=18A、VGS=0V
-
-
1.5
V
Reverse Recovery Time
trr
-
480
-
ns
Reverse Recovery Charge
Qrr
VGS=0V、IS=18A
di/dt=100A/us
-
4.5
-
uC
NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%
REV. 1, 11-Jan-2012
PAGE.2
HY18N50W
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
100
VGS= 20V~ 8.0V
ID - Drain Source Current (A)
ID - Drain-to-Source Current (A)
50
40
7.0V
30
6.0V
20
10
5.0V
0
VDS =50V
10
TJ = 125oC
-55oC
0
0
10
20
30
40
50
1
VDS - Drain-to-Source Voltage (V)
3
4
5
6
7
8
9
10
Fig.2 Transfer Characteristric
2
RDS(ON) - On Resistance(W)
0.6
RDS(ON) - On Resistance(W)
2
VGS - Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
0.5
0.4
VGS=10V
0.3
VGS = 20V
0.2
0.1
ID =9.0A
1.5
1
0.5
0
0
0
4
8
12
16
3
20
4
5
6
7
8
9
10
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Drain Current
Fig.4 On-Resistance vs Gate to Source Voltage
4000
12
f = 1MHz
VGS = 0V
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
25oC
1
3000
Ciss
2000
Coss
1000
Crss
0
ID =18A
10
VDS=400V
VDS=250V
VDS=100V
8
6
4
2
0
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
REV. 1, 11-Jan-2012
30
0
10
20
30
40
50
60
Qg - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
PAGE.3
HY18N50W
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
1.2
VGS =10 V
ID =9.0A
BVDSS - Breakdown Voltage
(Normalized)
RDS(ON) - On-Resistance
(Normalized)
2.5
2.1
1.7
1.3
0.9
0.5
ID = 250mA
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
TJ - Junction Temperature
TJ - Junction Temperature (oC)
Fig.7 On-Resistance
vs Junction Temperature
125
150
(oC)
Fig.8 Breakdown Voltage
vs Junction Temperature
100
IS - Source Current (A)
VGS = 0V
10
TJ = 125oC
25oC
1
-55oC
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig.9 Body Diode
Forward Voltage Characteristic
REV. 1, 11-Jan-2012
PAGE.4