IXYS DSEP2X31-12A

DSEP2x31-12A
V RRM = 1200 V
I FAV = 2x 30 A
t rr =
40 ns
HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSEP2x31-12A
Backside: isolated
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Housing: SOT-227B (minibloc)
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
Conditions
Ratings
Symbol
Definition
VRRM
max. repetitive reverse voltage
IR
reverse current
VF
forward voltage
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
thermal resistance junction to case
T VJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
I RM
max. reverse recovery current
CJ
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
max.
Unit
V
VR = 1200 V
250
µA
VR = 1200 V
TVJ = 150 °C
1
mA
IF =
30 A
TVJ = 25 °C
2.72
V
IF =
60 A
3.24
V
IF =
30 A
IF =
60 A
rectangular
TVJ = 150 °C
d = 0.5
1.77
V
2.26
V
TC = 70°C
30
A
TVJ = 150°C
1.31
V
15.4
mΩ
1.15
K/W
150
°C
TC = 25 °C
100
W
TVJ = 45°C
200
A
-40
t = 10 ms (50 Hz), sine
IF =
reverse recovery time
typ.
1200
for power loss calculation only
R thJC
t rr
min.
TVJ = 25 °C
TVJ = 25 °C
30 A; VR = 800 V
-di F /dt = 400 A/µs
VR = 600 V; f = 1 MHz
TVJ = 25 °C
13
A
TVJ = 125°C
24
A
TVJ = 25 °C
40
ns
TVJ = 125°C
150
ns
TVJ = 25 °C
12
pF
Data according to IEC 60747and per diode unless otherwise specified
20110531b
DSEP2x31-12A
Ratings
Symbol
Definition
Conditions
per terminal
I RMS
RMS current
R thCH
thermal resistance case to heatsink
Tstg
storage temperature
min.
typ.
max.
Unit
100
0.10
-40
Weight
A
K/W
150
30
°C
g
MD
mounting torque
1.1
1.5
Nm
MT
terminal torque
1.1
1.5
Nm
VISOL
isolation voltage
t = 1 second
3000
t = 1 minute
d Spp/App
creepage | striking distance on surface | through air
terminal to terminal
d Spb/Apb
creepage | striking distance on surface | through air
terminal to backside
V
2500
V
10.5
3.2
mm
8.6
6.8
mm
Product Marking
abcde
Logo
YYWW Z
Part No.
XXXXXX
Assembly Code
DateCode
Assembly Line
Ordering
Standard
Part Name
DSEP2x31-12A
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Marking on Product
DSEP2x31-12A
Delivering Mode
Tube
Base Qty Code Key
10
473286
Data according to IEC 60747and per diode unless otherwise specified
20110531b
DSEP2x31-12A
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110531b
DSEP2x31-12A
70
5
60
TVJ = 150°C
50
100°C
25°C
IF
4
Qr
[A] 30
50
IF = 60 A
30 A
15 A
3
40
60
TVJ = 125°C
VR = 800 V
IF = 60 A
30 A
15 A
40
IRM
30
[µC]
[A]
2
20
20
1
0
0
1
23
0
10 0
4
TVJ = 125°C
VR = 800 V
10
10
0
1000
0
200
Fig. 2 Typ. reverse recovery charge Qr
versus -diF /dt
Fig. 1 Forward current IF vs. VF
220
2.0
trr
[ns]
Kf 1.0
800
1000
120
1.2
TVJ = 125°C
IF = 30 A
100
200
IF = 60 A
30 A
15 A
180
600
Fig. 3 Typ. peak reverse current IRM
versus -diF /dt
TVJ = 125°C
VR = 800 V
1.5
400
-diF /dt [A/µs]
-diF /dt [A/µs]
VF [V]
1.0
80
0.8
60
0.6
40
0.4
VFR
trr
[µs]
[V]
160
IRM
0.5
140
QR
20
0.2
trr
VFR
0.0
120
0
40
80
120
160
0
0
200
400
600
800
1000
0
200
-diF /dt [A/µs]
TVJ [°C]
600
800
0.0
1000
-diF /dt [A/µs]
Fig. 5 Typ. recovery time trr vs. -diF /dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
400
2
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
Constants for Z thJC calculation:
1
i
0.1
Z thJC
Rthi (K/W)
ti (s)
1 0.368
0.0052
2 0.1417
0.0003
3 0.0295
0.0004
4 0.5604
0.0092
[K/W]
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110531b