DSEP2x31-12A V RRM = 1200 V I FAV = 2x 30 A t rr = 40 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DSEP2x31-12A Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: SOT-227B (minibloc) ●rIndustry standard outline ●rCu base plate internal DCB isolated ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant Conditions Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved max. Unit V VR = 1200 V 250 µA VR = 1200 V TVJ = 150 °C 1 mA IF = 30 A TVJ = 25 °C 2.72 V IF = 60 A 3.24 V IF = 30 A IF = 60 A rectangular TVJ = 150 °C d = 0.5 1.77 V 2.26 V TC = 70°C 30 A TVJ = 150°C 1.31 V 15.4 mΩ 1.15 K/W 150 °C TC = 25 °C 100 W TVJ = 45°C 200 A -40 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 1200 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C 30 A; VR = 800 V -di F /dt = 400 A/µs VR = 600 V; f = 1 MHz TVJ = 25 °C 13 A TVJ = 125°C 24 A TVJ = 25 °C 40 ns TVJ = 125°C 150 ns TVJ = 25 °C 12 pF Data according to IEC 60747and per diode unless otherwise specified 20110531b DSEP2x31-12A Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 100 0.10 -40 Weight A K/W 150 30 °C g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm VISOL isolation voltage t = 1 second 3000 t = 1 minute d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside V 2500 V 10.5 3.2 mm 8.6 6.8 mm Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Name DSEP2x31-12A IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DSEP2x31-12A Delivering Mode Tube Base Qty Code Key 10 473286 Data according to IEC 60747and per diode unless otherwise specified 20110531b DSEP2x31-12A Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110531b DSEP2x31-12A 70 5 60 TVJ = 150°C 50 100°C 25°C IF 4 Qr [A] 30 50 IF = 60 A 30 A 15 A 3 40 60 TVJ = 125°C VR = 800 V IF = 60 A 30 A 15 A 40 IRM 30 [µC] [A] 2 20 20 1 0 0 1 23 0 10 0 4 TVJ = 125°C VR = 800 V 10 10 0 1000 0 200 Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt Fig. 1 Forward current IF vs. VF 220 2.0 trr [ns] Kf 1.0 800 1000 120 1.2 TVJ = 125°C IF = 30 A 100 200 IF = 60 A 30 A 15 A 180 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt TVJ = 125°C VR = 800 V 1.5 400 -diF /dt [A/µs] -diF /dt [A/µs] VF [V] 1.0 80 0.8 60 0.6 40 0.4 VFR trr [µs] [V] 160 IRM 0.5 140 QR 20 0.2 trr VFR 0.0 120 0 40 80 120 160 0 0 200 400 600 800 1000 0 200 -diF /dt [A/µs] TVJ [°C] 600 800 0.0 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr vs. -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 400 2 Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Constants for Z thJC calculation: 1 i 0.1 Z thJC Rthi (K/W) ti (s) 1 0.368 0.0052 2 0.1417 0.0003 3 0.0295 0.0004 4 0.5604 0.0092 [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110531b