MCC 200 MCD 200 ITRMS = 2x340 A ITAVM = 2x196 A VRRM = 1400-1800 V Thyristor Modules VRSM VRRM VDSM VDRM V V 3 Type 6 7 1 Symbol Conditions ITRMS / IFRMS ITAVM / IFAVM TVJ = TVJM TC = 90°C; 180° sine TC = 85°C; 180° sine ITSM / IFSM TVJ = 45°C; VR = 0 3 1 2 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8000 8600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7000 7500 A A TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 320 000 311 000 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 245 000 236 000 A2s A2s TVJ = TVJM; repetitive; IT = 500 A f = 50Hz; tP = 200µs; VD = 2/3 VDRM; 100 A/µs IG = 0.5 A; diG/dt = 0.5 A/µs 500 A/µs 1000 V/µs 120 60 W W PGAV 20 W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C 3000 3600 V~ V~ non repetitive; IT = 500 A TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM; tP = 30 µs IT = ITAVM; tP = 500 µs VISOL 50/60 Hz, RMS; IISOL ≤ 1 mA; Md Mounting torque (M6) Terminal connection torque (M6) Weight Typical including screws 4 MCD Maximum Ratings (dv/dt)cr 5 5 4 2 340 196 216 (di/dt)cr 6 7 1 MCC 1500 1400 MCC 200-14io1 MCD 200-14io1 1700 1600 MCC 200-16io1 MCD 200-16io1 1900 1800 MCC 200-18io1 MCD 200-18io1 ∫i2dt 3 5 4 2 t = 1 min t=1s Features • International standard package • Direct copper bonded Al2O3 -ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Keyed gate/cathode twin pins Applications • Motor control • Power converter • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Contactless switches Advantages • Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits 2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 125 g IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 448 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 1-3 MCC 200 MCD 200 Symbol Conditions IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT / VF IT, IF = 200 A; TVJ = 25°C VT0 rT For power-loss calculations only (TVJ = 125°C) VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; IL Characteristic Values 15 mA 10 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG V 1.20 V 0.8 1.0 V mΩ TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2 3 150 220 V V mA mA VD = 2/3 VDRM 0.25 10 V mA TVJ = 25°C; tP = 30 µs; VD = 6 V IG = 0.5 A; diG/dt = 0.5 A/µs 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA tgd TVJ = 25°C; VD = ½ VDRM IG = 0.5 A; diG/dt = 0.5 A/µs 2 µs 6 5 3 1 1 4 2 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD, TVJ = 130°C 0.1 10-3 10-2 10-1 100 101 A 102 IG Fig. 1 Gate trigger characteristics 100 TVJ = 25°C tgd tq TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM 200 µs QS IRM TVJ = TVJM; IT = 300 A, -di/dt = 50 A/µs 550 235 µC A RthJC per thyristor; DC current per module per thyristor; DC current per module µs limit typ. 10 RthJH dS dA a Creepage distance on surface Strike distance through air Maximum allowable acceleration 0.13 0.065 0.18 0.09 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 1 0.01 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Dimensions in mm (1 mm = 0.0394") 0.1 A 1 10 IG Fig. 2 Gate trigger delay time 500 A IT , IF 400 300 200 TVJ = 125°C 100 TVJ = 25°C 0 0.0 0.4 0.8 1.2 1.6 V 2.0 VT, VF IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 448 Fig. 3 Forward current versus voltage drop 2-3 MCC 200 MCD 200 106 8000 400 ITAVM A IFAVM 2 I dt 50 Hz 80 % VRRM TVJ = 45°C TVJ = 125°C A 6000 DC 180° sin 120° 60° 30° A2s 300 TVJ = 45°C ITSM IFSM TVJ = 125°C 105 4000 200 100 2000 104 0 0.001 0.01 s 0.1 1 0 1 10 ms 0 25 50 75 t t Fig. 5 Ι2dt versus time (1-10 ms) Fig. 4 Surge overload current ITSM / FSM: Crest value, t: duration 400 Ptot 2100 W 1800 100 125 C 150 TC Fig. 6 Maximum forward current at case temperature W RthKA K/W 300 0.1 0.2 0.3 0.4 0.6 0.8 1.0 200 DC 180° sin 120° 60° 30° 100 RthKA K/W Ptot 0.03 0.04 0.06 0.08 0.1 0.15 0.2 1500 1200 900 Circuit B6 600 300 0 0 0 100 200 A 300 ITRMS/IFRMS 0 25 50 75 100 125 C 150 0 200 TA 400 A 600 0 25 50 75 Fig. 7 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 8 100 C 150 125 TA IdAVM 3~ rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.30 K/W ZthJC 0.25 30° 0.20 60° Constants for ZthJC calculation (DC): 0.15 i 120° 180° DC 0.10 1 2 3 4 5 0.05 0.00 10-3 10-2 10-1 100 101 s Rthi (K/W) ti (s) 0.01 0.0065 0.025 0.0615 0.027 0.00014 0.019 0.18 0.52 1.6 102 t IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 448 Fig. 9 Transient thermal impedance junction to case at various condition angles (per thyristor or diode) 3-3