SUR3020PT thru SUR3060PT Ultra Fast Recovery Epitaxial Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode SUR3020PT SUR3030PT SUR3040PT SUR3060PT VRSM V 200 300 400 600 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Unit TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 25 15 150 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 100 110 85 95 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 50 50 36 37 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight Millimeter Min. Max. Maximum Ratings TVJ=45oC I2t VRRM V 200 300 400 600 Dim. o C 62 W 0.4...0.6 Nm 2 g SUR3020PT thru SUR3060PT Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 50 25 3 uA uA mA VF IF=16A; TVJ=150oC TVJ=25oC 1.5 1.7 V VTO For power-loss calculations only 1.12 V TVJ=TVJM 23.2 rT RthJC RthCK RthJA trr IRM m 2 K/W 0.5 60 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC o _ VR=100V; IF=60A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C 35 50 ns 4 4.4 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-247AD * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR3020PT thru SUR3060PT Ultra Fast Recovery Epitaxial Diodes F ig. 1 F orward current vers us voltage drop. F ig. 2 R ecovery charge vers us -diF /dt. F ig. 3 P eak revers e current vers us -diF /dt. F ig. 4 Dynamic parameters vers us junction temperature. F ig. 5 R ecovery time vers us -diF /dt. F ig. 6 P eak forward voltage vers us diF /dt. F ig. 7 T rans ient thermal impedance junction to cas e.