KERSEMI SIHF830A

IRF830A, SiHF830A
Power MOSFET
www.kersemi.com
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Available
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
COMPLIANT
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Lead (Pb)-free Available
500
RDS(on) (Ω)
VGS = 10 V
1.4
Qg (Max.) (nC)
24
Qgs (nC)
6.3
Qgd (nC)
11
Configuration
Single
D
TO-220
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed power Switching
G
S
G
TYPICAL SMPS TOPOLOGIES
D
S
• Two Transistor Forward
• Half Bridge
• Full Bridge
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRF830APbF
SiHF830A-E3
IRF830A
SiHF830A
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
5.0
3.2
A
20
0.59
W/°C
Single Pulse Avalanche Energyb
EAS
230
mJ
Repetitive Avalanche Currenta
IAR
5.0
A
Repetitive Avalanche Energya
EAR
7.4
mJ
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
74
W
dV/dt
5.3
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 18 mH, RG = 25 Ω, IAS = 5.0 A (see fig. 12).
c. ISD ≤ 5.0 A, dI/dt ≤ 370 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
1
IRF830A, SiHF830A
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THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.60
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.5
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
µA
-
-
1.4
Ω
gfs
VDS = 50 V, ID = 3.0 Ab
2.8
-
-
S
Input Capacitance
Ciss
VGS = 0 V,
-
620
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
ID = 3.0 Ab
VGS = 10 V
Dynamic
Output Capacitance
Coss
VDS = 25 V,
-
93
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
-
4.3
-
Output Capacitance
Coss
VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz
886
Coss
VGS = 0 V; VDS = 400 V, f = 1.0 MHz
27
Coss eff.
VGS = 0 V; VDS = 0 V to 400 Vc
39
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Qg
VGS = 10 V
ID = 5.0 A, VDS = 400 V,
-
-
24
-
-
6.3
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
11
Turn-On Delay Time
td(on)
-
10
-
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
see fig. 6 and 13b
VDD = 250 V, ID = 5.0 A,
RG = 14 Ω, RD = 49 Ω, see fig.
10b
tf
pF
nC
-
21
-
-
21
-
-
15
-
-
-
5.0
-
-
20
-
-
1.5
V
-
430
650
ns
-
1.62
2.4
µC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb
TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/µsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
2
IRF830A, SiHF830A
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
3
IRF830A, SiHF830A
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4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
IRF830A, SiHF830A
www.kersemi.com
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
L
VDS
D.U.T.
RG
IAS
20 V
tp
Driver
+
A
- VDD
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
5
IRF830A, SiHF830A
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Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
6
Fig. 13b - Gate Charge Test Circuit
IRF830A, SiHF830A
www.kersemi.com
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
7