TYSEMI FML9

Transistors
Diodes
IC
SMD Type
Product specification
FML9
■ Features
Unit: mm
● Tr1: Low VCE(sat)
● Di : Low VF
4
5
● Small package
(3)
(2)
(1)
1
Di2
(4)
2
3
Tr1
(5)
■ Absolute Maximum Ratings Ta = 25℃
Tr1
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-15
V
Collector-emitter voltage
VCEO
-12
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-1.5
A
Power dissipation
PD
200
mW
Tj, TSTG
-40 to +125
℃
Symbol
Rating
Unit
Reak reverse voltage
VRM
25
V
Reverse voltage (DC)
VR
20
V
IF
700
mA
IFSM
3
A
Tj, TSTG
-40 to +125
℃
Operating and Storage and Temperature Range
Di2
Parameter
Average rectified forward current
Forward current surge peak (60HZ, 1∞)
Operating and Storage and Temperature Range
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Transistors
IC
Diodes
SMD Type
Product specification
FML9
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Transistor TR1
Collector-Base Breakdown Voltage
V(BR)CBO IC = -10 μA, IE = 0
-15
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = -1 mA, IB = 0
-12
V
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
V
IC = -10 μA, IC = 0
Collector cutoff current
ICBO
VCB=-15V, IE=0
-100
nA
Emitter cutoff current
IEBO
VEB=-6V, IC=0
-100
nA
DC current gain
hFE
VCE=-2V, IC= -200mA
collector-emitter saturation voltage *
Transition frequency
VCE(sat)
fT
270
680
-0.2
IC = -500 mA; IB = -25 mA
V
IC = -200 mA; VCE = -2 V; f = 100 MHz
400
MHz
Cob
VCB=-10V, IE=0A, f=1MHz
12
pF
Forward voltage
VF
Reverse current
IR
IF=700mA
VR=20V
Collector output capacitance
Di2
490
mV
200
μA
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Marking
Marking
L9
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Transistors
IC
Diodes
SMD Type
Product specification
FML9
■ Typical Characteristics
Ta=100°C
VCE=−2V
Pulsed
Ta=25°C
Ta=−40°C
100
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs.
10
IC/IB=20/1
VCE=−2V
Pulsed
Ta=100°C
VCE(sat)
Ta=100°C
Ta=25°C
0.01
Ta=−40°C
0.001
0.001
0.1
1
10
Ta=100°C
0.1
Ta=25°C
Ta=−40°C
0.01
0
0.5
1
IC/IB=50/1
0.01
IC/IB=20/1
IC/IB=10/1
0.001
0.001
0.01
0.1
1
10
Fig.3 Collector-emitter saturation voltage
10000
Ta=25°C
Ta=25°C
VCE=−2V
f=100MHz
VCE=−5V
f=100MHz
100
1000
100
tstg
tf
10
tdon
tr
10
0.001
1.5
0.1
SWITCHING TIME : (ns)
1
Ta=25°C
Pulsed
vs. collector current
1000
VCE=−2V
Pulsed
1
COLLECTOR CURRENT : IC (A)
vs. collector current
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR CURRENT : IC (A)
0.01
COLLECTOR CURRENT : IC (A)
Fig.2 Base-emitter saturation voltage
10
BASE TO EMITTER CURRENT : VBE(on) (V)
Fig.4 Grounded emitter propagation
0.01
0.1
1
10
1
0.001
0.01
0.1
1
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
Fig.5 Gain bandwidth product
Fig.6 Switching time
characteristics
10
vs. emitter current
1000
10
Ta=25˚C
IE=0mA
f=1MHz
COLLECTOR CURRENT : IC (A)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
VBE(sat)
0.1
collector current
0.001
Ta=−40°C
Ta=25°C
1
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
DC CURRENT GAIN : hFE
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE SATUATION VOLTAGE : VBE(sat) (V)
Tr1
100
Cib
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.7 Collector output capacitance
Ta=25°C
Single Pulsed
1ms
1
10ms
PW=100ms
0.1
DC Operation
0.01
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operation area
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
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Transistors
IC
Diodes
SMD Type
Product specification
FML9
■ Typical Characteristics
Di2
1000m
REVERSE CURRENT : IR (A)
100m
1
°C
25
100m
Ta
5°
C
10m
=−
25
°C
=1
Ta
Ta
=2
FORWARD CURRENT : IF (A)
10
1m
0.1m
Ta=125°C
10m
1m
100µ
Ta=25°C
10µ
1µ
Ta=−25°C
0.1µ
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
50
60
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
Fig.9 Forward characteristics
Fig.10 Reverse characteristics
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