Transistors Diodes IC SMD Type Product specification FML9 ■ Features Unit: mm ● Tr1: Low VCE(sat) ● Di : Low VF 4 5 ● Small package (3) (2) (1) 1 Di2 (4) 2 3 Tr1 (5) ■ Absolute Maximum Ratings Ta = 25℃ Tr1 Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -6 V Collector current IC -1.5 A Power dissipation PD 200 mW Tj, TSTG -40 to +125 ℃ Symbol Rating Unit Reak reverse voltage VRM 25 V Reverse voltage (DC) VR 20 V IF 700 mA IFSM 3 A Tj, TSTG -40 to +125 ℃ Operating and Storage and Temperature Range Di2 Parameter Average rectified forward current Forward current surge peak (60HZ, 1∞) Operating and Storage and Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 Transistors IC Diodes SMD Type Product specification FML9 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Transistor TR1 Collector-Base Breakdown Voltage V(BR)CBO IC = -10 μA, IE = 0 -15 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1 mA, IB = 0 -12 V Emitter-Base Breakdown Voltage V(BR)EBO -6 V IC = -10 μA, IC = 0 Collector cutoff current ICBO VCB=-15V, IE=0 -100 nA Emitter cutoff current IEBO VEB=-6V, IC=0 -100 nA DC current gain hFE VCE=-2V, IC= -200mA collector-emitter saturation voltage * Transition frequency VCE(sat) fT 270 680 -0.2 IC = -500 mA; IB = -25 mA V IC = -200 mA; VCE = -2 V; f = 100 MHz 400 MHz Cob VCB=-10V, IE=0A, f=1MHz 12 pF Forward voltage VF Reverse current IR IF=700mA VR=20V Collector output capacitance Di2 490 mV 200 μA * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. ■ Marking Marking L9 http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 Transistors IC Diodes SMD Type Product specification FML9 ■ Typical Characteristics Ta=100°C VCE=−2V Pulsed Ta=25°C Ta=−40°C 100 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. 10 IC/IB=20/1 VCE=−2V Pulsed Ta=100°C VCE(sat) Ta=100°C Ta=25°C 0.01 Ta=−40°C 0.001 0.001 0.1 1 10 Ta=100°C 0.1 Ta=25°C Ta=−40°C 0.01 0 0.5 1 IC/IB=50/1 0.01 IC/IB=20/1 IC/IB=10/1 0.001 0.001 0.01 0.1 1 10 Fig.3 Collector-emitter saturation voltage 10000 Ta=25°C Ta=25°C VCE=−2V f=100MHz VCE=−5V f=100MHz 100 1000 100 tstg tf 10 tdon tr 10 0.001 1.5 0.1 SWITCHING TIME : (ns) 1 Ta=25°C Pulsed vs. collector current 1000 VCE=−2V Pulsed 1 COLLECTOR CURRENT : IC (A) vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 0.01 COLLECTOR CURRENT : IC (A) Fig.2 Base-emitter saturation voltage 10 BASE TO EMITTER CURRENT : VBE(on) (V) Fig.4 Grounded emitter propagation 0.01 0.1 1 10 1 0.001 0.01 0.1 1 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.5 Gain bandwidth product Fig.6 Switching time characteristics 10 vs. emitter current 1000 10 Ta=25˚C IE=0mA f=1MHz COLLECTOR CURRENT : IC (A) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) VBE(sat) 0.1 collector current 0.001 Ta=−40°C Ta=25°C 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATUATION VOLTAGE : VBE(sat) (V) Tr1 100 Cib Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance Ta=25°C Single Pulsed 1ms 1 10ms PW=100ms 0.1 DC Operation 0.01 0.01 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operation area vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage http://www.twtysemi.com [email protected] 4008-318-123 3 of 4 Transistors IC Diodes SMD Type Product specification FML9 ■ Typical Characteristics Di2 1000m REVERSE CURRENT : IR (A) 100m 1 °C 25 100m Ta 5° C 10m =− 25 °C =1 Ta Ta =2 FORWARD CURRENT : IF (A) 10 1m 0.1m Ta=125°C 10m 1m 100µ Ta=25°C 10µ 1µ Ta=−25°C 0.1µ 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.9 Forward characteristics Fig.10 Reverse characteristics http://www.twtysemi.com [email protected] 70 4008-318-123 4 of 4