SMD Type Product specification MMBF0201NLT1 Power MOSFET 300 mAmps, 20 Volts Preferred Device N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 300 mAMPS − 20 VOLTS RDS(on) = 1 W N−Channel 3 Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed Drain Current (tp ≤ 10 ms) IDM 300 240 750 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 2 MARKING DIAGRAM AND PIN ASSIGNMENT mAdc ID ID 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 Drain 1 N1 M G G 2 SOT−23 CASE 318 STYLE 21 1 Gate 2 Source N1 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package MMBF0201NLT1 SOT−23 MMBF0201NLT1G Shipping † 3000 Tape & Reel SOT−23 3000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. http://www.twtysemi.com [email protected] 4008-318-123 1of 2 SMD Type Product specification MMBF0201NLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA) mAdc Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) rDS(on) − − 0.75 1.0 1.0 1.4 gFS − 450 − mMhos pF ON CHARACTERISTICS (Note 1) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V) Ciss − 45 − Output Capacitance (VDS = 5.0 V) Coss − 25 − Transfer Capacitance (VDG = 5.0 V) Crss − 5.0 − td(on) − 2.5 − tr − 2.5 − td(off) − 15 − tf − 0.8 − QT − 1400 − pC IS − − 0.3 A Pulsed Current ISM − − 0.75 Forward Voltage (Note 2) VSD − 0.85 − SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 W) Fall Time Gate Charge (See Figure 5) ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current V 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 2of 2