Product specification MGSF1N02LT1 Power MOSFET 750 mAmps, 20 Volts 750 mAMPS 20 VOLTS RDS(on) = 90 m N–Channel SOT–23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low RDS(on) • Miniature SOT–23 Surface Mount Package Saves Board Space N–Channel 3 1 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDSS 20 Vdc VGS ± 20 Vdc Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) ID IDM 750 2000 mA Total Power Dissipation @ TA = 25°C PD 400 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C RθJA 300 °C/W TL 260 °C Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds MARKING DIAGRAM 3 SOT–23 CASE 318 STYLE 21 1 N2 W 2 W = Work Week PIN ASSIGNMENT Drain 3 1 Gate 2 Source ORDERING INFORMATION Device Package Shipping MGSF1N02LT1 SOT–23 3000 Tape & Reel MGSF1N02LT3 SOT–23 10,000 Tape & Reel Preferred devices are recommended choices for future use and best overall value. http://www.twtysemi.com [email protected] 1 of 2 Product specification MGSF1N02LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 – – Vdc – – – – 1.0 10 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µAdc) µAdc Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS – – ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) rDS(on) – – 0.075 0.115 0.090 0.130 ON CHARACTERISTICS (Note 1.) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss – 125 – Output Capacitance (VDS = 5.0 Vdc) Coss – 120 – Transfer Capacitance (VDG = 5.0 Vdc) Crss – 45 – td(on) – 2.5 – tr – 1.0 – td(off) – 16 – tf – 8.0 – QT – 6000 – pC A pF SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 Ω) Fall Time Gate Charge (See Figure 6) ns SOURCE–DRAIN DIODE CHARACTERISTICS IS – – 0.6 Pulsed Current ISM – – 0.75 Forward Voltage (Note 2.) VSD – 0.8 – Continuous Current V 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://www.twtysemi.com [email protected] 2 of 2