Product specification MGSF2N02EL Power MOSFET 2.8 A, 20 V RDS(on) = 85 m (max) 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. N−Channel D Features • • • • Pb−Free Packages are Available Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space IDSS Specified at Elevated Temperature G S Applications • DC−DC Converters • Power Management in Portable and Battery Powered Products, ie: MARKING DIAGRAM Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 1 Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 8.0 Vdc ID Rating Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 s) IDM 2.8 5.0 Total Power Dissipation @ TA = 25°C PD 1.25 W Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance Junction−to−Ambient (Note 1) Thermal Resistance Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds A NT M 2 NT M = Device Code = Date Code PIN ASSIGNMENT 3 Drain °C/W RJA 100 300 TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. 1” Pad, t < 10 sec. 2. Min pad, steady state. http://www.twtysemi.com SOT−23 CASE 318 STYLE 21 [email protected] 1 Gate 2 Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1 of 2 Product specification MGSF2N02EL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 10 Adc) Temperature Coefficient (Positive) V(BR)DSS Min Typ Max Unit 20 − − 22 − − Vdc mV/°C − − − − 1.0 10 − − 100 nA 0.5 − − −2.3 1.0 − Vdc mV/°C − − 78 105 85 115 OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Source Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc) IGSS Adc ON CHARACTERISTICS (Note 3) Gate−Source Threshold Voltage (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (VGS = 4.5 Vdc, ID = 3.6 A) (VGS = 2.5 Vdc, ID = 3.1 A) RDS(on) m DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 5 0 Vdc, Vd VGS = 0 V V, f = 1.0 MHz) Output Capacitance Transfer Capacitance Ciss − 150 − Coss − 130 − Crss − 45 − td(on) − 6.0 − pF SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time (VDD = 16 Vdc, ID = 2.8 Adc, Vgs = 4.5 V, RG = 2.3 ) Turn−Off Delay Time Fall Time Gate Charge (VDS = 16 Vd Vdc, ID = 1.75 1 75 Adc, Ad VGS = 4.0 Vdc) (Note 3) tr − 95 − td(off) − 28 − tf − 125 − QT − 3.5 − Qgs − 0.6 − Qgd − 1.5 − − − 0.76 − 1.2 − trr − 104 − ta − 42 − tb − 62 − QRR − 0.20 − ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward Voltage VSD (IS = 1.0 Adc, VGS = 0 Vdc) (Note 3) Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, dlS/ dt = 100 A/s) (Note 3) Reverse Recovery Stored Charge V ns C 3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 MGSF2N02ELT3G http://www.twtysemi.com Package Shipping† SOT−23 3,000 Tape & Reel SOT−23 (Pb−Free) 3,000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel [email protected] 2 of 2