Product specification NTR4170N Power MOSFET V(BR)DSS 30 V, 3.2 A, Single N−Channel, SOT−23 30 V Features • • • • • Low RDS(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb−Free Device RDS(on) MAX ID MAX 55 mW @ 10 V 3.2 A 70 mW @ 4.5 V 2.8 A 110 mW @ 2.5 V 2.0 A SIMPLIFIED SCHEMATIC − N−CHANNEL D Applications • Power Converters for Portables • Battery Management • Load/Power Switch G S MARKING DIAGRAM/ PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±12 V Parameter Continuous Drain Current (Note 1) t ≤ 30 s t ≤ 10 s Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C TA = 25°C A 4.0 W PD t ≤ 10 s Pulsed Drain Current 2.3 0.78 TA = 25°C 1.25 tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM 8.0 A TJ, Tstg −55 to 150 °C IS 0.78 A TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter 3 Drain 1 TREMG G 2 3.2 ID 3 Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 260 °C/W Junction−to−Ambient − t ≤ 30 s RqJA 153 Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 SOT−23 CASE 318 STYLE 21 1 1 Gate 2 Source TRE = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† NTR4170NT1G SOT−23 (Pb−Free) 3000/Tape & Reel NTR4170NT3G SOT−23 (Pb−Free) 10000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). http://www.twtysemi.com [email protected] 1 of 2 Product specification NTR4170N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS /TJ ID = 250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V, TJ = 25°C VGS = 0 V, VDS = 24 V, TJ = 125°C 1.0 5.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "12 V $100 nA VGS = VDS, ID = 250 mA OFF CHARACTERISTICS V 26.4 mV/°C TY CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) Negative Threshold Temperature Coefficient VGS(TH) /TJ Drain−to−Source On−Resistance RDS(on) Forward Transconductance 0.6 1.0 1.4 3.3 gFS V mV/°C VGS = 10 V, ID = 3.2 A 45 55 mW VGS = 4.5 V, ID = 2.8 A 50 70 VGS = 2.5 V, ID = 2.0 A 64 110 VDS = 5.0 V, ID = 3.2 A 8.0 S 432 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 15 V Coss Crss 53.6 37.1 nC Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.4 RG 3.8 W 6.4 ns Gate Resistance 4.76 VGS = 4.5 V, VDS = 15 V, ID = 3.2 A 0.3 1.0 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDD = 15 V, ID = 3.2 A, RG = 6.2 W tf 9.9 15.1 3.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 1.0 A, TJ = 25°C 0.75 8.0 VGS = 0 V, IS = 1.0 A, dISD/dt = 100 A/ms QRR 1.0 V ns 5.1 2.9 2.9 nC 2. Surface−mounted on FR4 board using 1 in sq pad size (CU area = 1.127 in sq [2 oz] including traces). 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://www.twtysemi.com [email protected] 2 of 2