Product specification MGSF1N03L, MVGSF1N03L Power MOSFET V(BR)DSS 30 V, 2.1 A, Single N−Channel, SOT−23 RDS(on) TYP 80 mW @ 10 V 30 V These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. ID MAX 2.1 A 125 mW @ 4.5 V N−Channel D Features • • • • Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space AEC−Q101 Qualified and PPAP Capable − MVGSF1N03LT1 These Devices are Pb−Free and are RoHS Compliant G S MARKING DIAGRAM/ PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 2.1 A Continuous Drain Current RqJL Steady State TA = 25°C Power Dissipation RqJL Steady State TA = 25°C PD 0.69 W Continuous Drain Current (Note 1) Steady State TA = 25°C ID 1.6 A PD 0.42 W tp = 10 ms IDM 6.0 A C = 100 pF, RS = 1500 W ESD 125 V TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 2.1 A Lead Temperature for Soldering Purposes (1/8” from case for 10 sec) TL 260 °C Symbol Max Unit Junction−to−Foot − Steady State RqJL 180 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 300 Junction−to−Ambient − t < 10 s (Note 1) RqJA 250 Junction−to−Ambient − Steady State (Note 2) RqJA 400 Power Dissipation (Note 1) Operating Junction and Storage Temperature 1.2 THERMAL RESISTANCE RATINGS Parameter 1 SOT−23 CASE 318 STYLE 21 1.5 TA = 85°C TA = 25°C Pulsed Drain Current ESD Capability (Note 3) TA = 85°C 3 Drain N3 M G N3 M G G 1 Gate 2 Source = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MGSF1N03LT1G SOT−23 Pb−Free 3000 / Tape & Reel MGSF1N03LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel MVGSF1N03LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 650 mm2, 1 oz. Cu pad size. 2. Surface−mounted on FR4 board using 50 mm2, 1 oz. Cu pad size. 3. ESD Rating Information: HBM Class 0. http://www.twtysemi.com [email protected] 1 of 2 Product specification MGSF1N03L, MVGSF1N03L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 30 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mAdc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) rDS(on) − − 0.08 0.125 0.10 0.145 mAdc ON CHARACTERISTICS (Note 4) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss − 140 − pF Output Capacitance (VDS = 5.0 Vdc) Coss − 100 − Transfer Capacitance (VDG = 5.0 Vdc) Crss − 40 − td(on) − 2.5 − tr − 1.0 − td(off) − 16 − tf − 8.0 − QT − 6000 − pC IS − − 0.6 A Pulsed Current ISM − − 0.75 Forward Voltage (Note 5) VSD − 0.8 − SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 W) Fall Time Gate Charge (See Figure 6) ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current V 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. http://www.twtysemi.com [email protected] 2 of 2