UM4805 Dual P-Ch 30V Fast Switching MOSFETs General Description Product Summery The UM4805 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM4805 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON -30V ID 18m -8A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Features Load Switch SOP8 Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline D2 D2 D1 D1 S2 G2 S1 G1 100% EAS Guaranteed Green Device Available Absolute Maximum Ratings Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current Units V ±25 V -8 ID IDM TA=70°C B TA=25°C Power Dissipation A Maximum -30 -40 2 PD TA=70°C Junction and Storage Temperature Range A -6.9 W 1.44 TJ, TSTG °C -55 to 150 Thermal Data Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State 1 R JA R JL Typ 50 73 31 Max 62.5 110 40 Units °C/W °C/W °C/W UM4805 Dual P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 , unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250 A, VGS=0V VDS=-24V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=-250 A VGS=-10V, VDS=-5V VGS=-10V, ID=-8A gFS VSD VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-8A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance Rg Gate resistance VGS=-20V, ID=-8A 16 -2.5 -3 16 19 20.5 15 33 25 18 21 -0.75 nA V A m m m -1 -2.6 S V A VGS=0V, VDS=-15V, f=1MHz 2076 503 pF pF 302 2 pF VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-8A 39 8 nC nC 11.4 12.7 nC ns 7 25.2 ns ns Reverse Transfer Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge A -5 ±100 -1.7 40 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Units -1 TJ=125°C Static Drain-Source On-Resistance Max V TJ=55°C RDS(ON) IS Typ tD(on) tr tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime tf trr Turn-Off Fall Time 12 ns IF=-8A, dI/dt=100A/ s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/ s 32 26 ns nC Qrr VGS=-10V, VDS=-15V, RL=1.8 , RGEN=3 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. 2 UM4805 Dual P-Ch 30V Fast Switching MOSFETs Typical Characteristics 50 -10V -8V 25 -6V VDS=-5V -5.5V 40 20 15 -ID(A) -ID (A) -5V 30 20 -4.5V 10 10 VGS=-4V 5 125°C 25°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 30 1.4 ID=-8A VGS=-6V Normalized On-Resistance RDS(ON) (m ) 25 20 15 VGS=-10V 10 5 1.3 VGS=-10V 1.2 1.1 VGS=-4.5V 1 0.9 0 0 5 10 15 20 0.8 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 1.0E+01 50 1.0E+00 1.0E-01 -IS (A) 40 30 125°C 20 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID=-8A RDS(ON) (m ) 25 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 25°C 10 1.0E-05 1.0E-06 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 1.2 UM4805 Dual P-Ch 30V Fast Switching MOSFETs 3000 10 VDS=-15V ID=-8A 2500 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2000 1500 Coss 1000 2 Crss 500 0 0 5 10 15 20 25 30 35 0 40 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 40 TJ(Max)=150°C TA=25°C 100 s 1ms RDS(ON) 10.0 limited TJ(Max)=150°C TA=25°C 10 s 30 Power (W) -ID (Amps) 15 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10ms 0.1s 1.0 10 1s 20 10 10s DC 0 0.01 0.1 0.1 1 10 100 JA.R JA 10 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.Z R JA=62.5°C/W 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.1 Z Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 100 1000