VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits • • • • TO-247-3 Higher System Efficiency Increased System Switching Frequency Reduced Cooling Requirements Increased System Reliability Applications • • Auxiliary Power Supplies Switch Mode Power Supplies Part Number Package C2M1000170D TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol IDS (DC) Parameter Continuous Drain Current IDS (pulse) Pulsed Drain Current VGS Gate Source Voltage Ptot Power Dissipation TJ , Tstg 1 Operating Junction and Storage Temperature Value 4.9 3.0 A A -10/+25 V 69 W -55 to +150 ˚C ˚C Solder Temperature 260 Md Mounting Torque 1 8.8 Test Conditions VGS = 20 V, TC = 25 °C Note Fig. 14 VGS = 20 V, TC = 100 °C 5.0 TL C2M1000170D Rev. A Unit Pulse width tP limited by Tjmax TC = 25 °C TC=25 °C, TJ = 150 °C 1.6 mm (0.063”) from case for 10s Nm M3 or 6-32 screw lbf-in Fig. 16 Fig. 13 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Typ. V VGS = 0 V, ID = 100 μA 2.4 V VDS = VGS, ID = 100 μA 1.4 1.8 V VDS = VGS, ID = 100 μA TJ = 150 °C Drain-Source On-State Resistance 30 100 20 0.95 1.1 2.1 2.9 0.9 Transconductance Ciss Input Capacitance Coss Output Capacitance 12 Crss Reverse Transfer Capacitance 1.3 Eoss Coss Stored Energy 6.0 trv td(off)v Turn-On Delay Time 15 Internal Gate Resistance Note Fig. 9 VDS = 1700 V, VGS = 0 V VDS = 1700 V, VGS = 0 V TJ=150 °C VGS = 20 V, VDS = 0 V VGS = 20 V, ID = 2 A Ω VGS = 20 V, ID = 2 A, TJ = 150 °C VDS= 20 V, IDS= 2 A VDS= 20 V, IDS= 2 A, TJ = 150 °C Fig. 6, 7, 8 Fig. 5 VGS = 0 V pF VDS = 1000 V Fig. 12 f = 1 MHz VAC = 25 mV μJ Fig 10 VDD = 1000 V, VGS = -5/20 V 9 Turn-Off Delay Time RG nA 191 46 Fall Time nA S 0.8 Rise Time tfv Test Conditions 2.0 gfs td(on)v Max. Unit 1700 Gate Threshold Voltage IDSS RDS(on) Min. ID = 2 A ns RG(ext) = 0 Ω, RL = 40 Ω Fig. 7 Timing relative to VDS 9 24.8 f = 1 MHz, VAC = 25 mV, ESR of CISS Ω Built-in SiC Body Diode Characteristics Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Max. Unit 1.7 1.8 °C/W Max. Unit Test Conditions Note Fig. 15 Gate Charge Characteristics Symbol 2 Parameter Typ. Qgs Gate to Source Charge 2.7 Qgd Gate to Drain Charge 5.4 Qg Gate Charge Total 13 C2M1000170D Rev. A nC Test Conditions VDS = 1000 V, VGS = -5/20 V ID = 1 A Per JEDEC24 pg 27 Note Fig. 18 Typical Performance 4.0 VGS = 18 V 3.0 VGS = 16 V 2.5 2.0 VGS = 12 V 1.5 1.0 0.5 VGS = 20 V Parameters: TJ = 25 °C tp < 50 µ 3.5 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 3.5 4.0 VGS = 20 V Parameters: TJ = -55 °C tp < 50 µ VGS = 18 V 3.0 VGS = 16 V 2.5 VGS = 12 V 2.0 1.5 1.0 0.5 0.0 0.0 0 1 2 3 4 5 0 1 2 Drain-Source Voltage, VDS (V) Figure 1. Typical Output Characteristics TJ = -55 °C Drain-Source Current, IDS (A) 4.0 Parameters: TJ = 100 °C tp < 50 µ 3.5 VGS = 20 V Parameters: TJ = 150 °C tp < 50 µ 3.5 VGS = 18 V 3.0 VGS = 16 V 2.5 VGS = 12 V 2.0 1.5 1.0 VGS = 18 V VGS = 20 V VGS = 16 V 3.0 VGS = 12 V 2.5 2.0 1.5 1.0 0.0 0.0 0 1 2 3 4 5 6 0 7 2 3.0 5.0 Normalized Typical On Resistance, RDS On (p.u.) Parameters: TJ = -55 °C tp < 50 µ 4.0 3.0 TJ = 25 °C 2.0 TJ = 150 °C TJ = -55 °C 1.0 0.0 2 4 6 8 Gate-Source Voltage, VGS (V) 10 Figure 5. Typical Transfer Characteristics C2M1000170D Rev. A 12 14 8 10 2.5 Conditions: IDS = 2 A VGS = 20 V tp < 50 µs 2.0 1.5 1.0 0.5 0.0 -55 0 6 Figure 4. Typical Output Characteristics TJ = 150 °C Figure 3. Typical Output Characteristics TJ = 100 °C 6.0 4 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Drain-Source Current, IDS (A) 5 0.5 0.5 3 4 Figure 2. Typical Output Characteristics TJ = 25 °C Drain-Source Current, IDS (A) 4.0 3 Drain-Source Voltage, VDS (V) -35 -15 5 25 45 65 85 105 125 145 Junction Temperature, TJ (°C) Figure 6. Normalized On-Resistance vs. Temperature 3,000 3,000 2,500 2,500 Typical On Resistance, RDS On (mOhms) Typical On Resistance, RDS On (mOhms) Typical Performance TJ = 150 °C 2,000 1,500 1,000 TJ = 25 °C TJ = -55 °C 500 Conditions: VGS = 20 V tp < 50 µs TJ = 150 °C 2,000 1,500 TJ = 25 °C 1,000 500 0 TJ = -55 °C Conditions: IDS = 2 A tp < 50 µs 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 12 13 14 Drain-Source Current, IDS (A) Figure 7. Typical On-Resistance vs. Drain Current 16 19 20 Stored Energy, EOSS (µJ) 2.5 Typical 2.0 Min 1.5 5 1.0 4 3 2 1 0.5 0.0 0 -55 -30 -5 20 45 70 95 120 145 0 250 500 750 1000 Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C) Figure 10. Typical transfer Characteristics Figure 9. Typical Threshold Voltage vs. Temperature CISS CISS 100 100 Capacitance (pF) Capacitance (pF) 18 6 Conditions: VGS = VDS IDS = 1 mA 3.0 COSS 10 Conditions: ftest = 1 MHz Vac = 25 mV TJ = 25 °C COSS 10 Conditions: ftest = 1 MHz Vac = 25 mV TJ = 25 °C Crss Crss 1 1 0 50 100 150 200 250 Drain-Source Voltage, VDS (V) Figure 11. Typical Capacitances vs Drain Voltage (0-300 V) 4 17 Figure 8. Typical On-Resistance vs. Gate Voltage 3.5 Threshold Voltage, Vth (V) 15 Gate-Source Voltge, VGS (V) C2M1000170D Rev. A 300 0 300 600 900 1200 1500 Drain-Source Voltage, VDS (V) Figure 12. Typical Capacitances vs Drain Voltage (0-1200 V) 1800 Typical Performance 6 Conditions: TJ ≤ 150 °C 70 Drain-Source Continous Current, IDS (DC) (A) Maximum Dissipated Power, Ptot (W) 80 60 50 40 30 20 10 0 Conditions: TJ ≤ 150 °C 5 4 3 2 1 0 -55 -5 45 95 145 -55 -5 45 Case Temperature, TC (°C) 95 145 Case Temperature, TC (°C) Figure 13. Power Dissipation Derating Curve Figure 14. Continuous IDS Current derating curve 1 µs 1 100 µs D=30% Drain-Source Current, IDS (A) Junction-Case Thermal Response, Zth JC (°C/W) 10.00 D=90% D=70% D=10% 0.1 D=5.0% D=2.0% D=1.0% 0.01 D=0.5% D=0.2% tp Single Pulse 10 µ s 10E-6 T 100 µs 100E-6 1 ms 1E-3 10 ms 10E-3 1 ms 1.00 100 ms 0.10 Conditions: TC = 25 °C D = 0, Parameter: tp D = tp / T 0.01 0.001 1 µs 1E-6 Limited by RDS On 100 ms 100E-3 0.1 1 s1 1 10 Figure 15. Typical Transient Thermal Impedance (Junction - Case) with Duty Cycle 20 Conditions: IDS = 1 A IGS = 1 mA VDS = 1000 V TJ = 25 °C trv 50 Conditions: VGS = 0/20 V VDD = 1000 V RL = 160 Ω ID = 2.0 A TJ= 25°C 30 Gate-Source Voltage, VGS (V) 15 40 Time (ns) 1000 Figure 16. Safe Operating Area, TJ = 25 °C 60 tD(off)V 20 10 tD(on)V 10 5 0 -5 0 0 5 10 15 External Gate Resistor, RG (Ω) 20 Figure 17. Resistive Switching Times vs. RG 5 100 Drain-Source Voltage, VDS (V) Time C2M1000170D Rev. A 25 0 2 4 6 8 10 Gate Charge, QG (nC) Figure 18. Typical Gate Charge 12 14 Typical Performance C4D10120D 10A, 1200V SiC Schottky L = 856 µH V = 800 V C = 42.3 µF D.U.T. C2M0080120D Figure 24. Clamped Inductive Switching Waveform Test Circuit Figure 25. Switching Test Waveforms for Transition Times ESD Ratings 6 ESD Test Total Devices Sampled Resulting Classification ESD-HBM All Devices Passed 1000V 2 (>2000V) ESD-MM All Devices Passed 400V C (>400V) ESD-CDM All Devices Passed 1000V IV (>1000V) C2M1000170D Rev. A Package Dimensions Package TO-247-3 POS A (2) (1) (3) Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC N 3 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 Recommended Solder Pad Layout Part Number Package Marking C2M1000170D TO-247-3 C2M1000170D TO-247-3 This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc. 7 C2M1000170D Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power