120 Watts, 2110-2170 MHz GOLDMOS® Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency (P-1dB) and 14 dB linear gain. Full gold metallization ensures excellent device lifetime and reliability. • INTERNALLY MATCHED • Typical WCDMA Performance at 28 V - Average Output Power = 20 Watts - Gain = 14 dB - Efficiency = 22% (channel bandwidth 3.84 MHz, adjacent channels ±5 MHz, peak/avg 8.5:1 at 0.01% CCD) • Typical CW Performance at 28 V - Output Power at P1-dB = 120 Watts - Gain = 13 dB - Efficiency = 48% • Full Gold Metallization • Integrated ESD Protection; Class 1 (minimum) Human Body Model • Excellent Thermal Stability • Broadband Internal Matching • Low HCI Drift • Capable of Handling 10:1 VSWR @ 28 V, 120 Watts (CW) Output Power Typical Single Carrier WCDMA Performance 25 Efficiency ACPR (dBc)x -40 20 Gain -45 15 -50 10 ACPR -55 V DD = 28 V IDQ = 1.45 A f = 2170 MHz -60 0 5 10 15 20 5 Gain (dB) & Efficiency (%) -35 0 25 Output Power (Watts) Package 20275 PTF 1020 03 Guaranteed Performance WCDMA Measurements (in Infineon test fixture) VDD = 28 V, IDQ = 1.45 A, POUT = 20 W AVG f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels ± 5 MHz, Peak to Avg 8.5:1 Characteristic Symbol Min Typ Max Units ACPR — -45 -40 dB Gain Gps 13 14.5 — dB Drain Efficiency hD 19 22 — % Adjacent Channel Power Ratio Two-Tone Measurements (in Infineon test fixture) VDD = 28 V, IDQ = 1.20 A, POUT = 120 W PEP, f = 2170 MHz, Tone Spacing = 100 kHz Characteristic Symbol Min Typ Max Units Gain Gps 12.5 14 — dB Drain Efficiency hD 31 36 — % Intermodulation Distortion IMD -27 -30 — dBc All published data at TCASE = 25°C unless otherwise indicated. Data Sheet Rev. A 1 2002-10-08 PTF 102003 Electrical Characteristics (Guaranteed) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, IDS = 1 µA/Side V(BR)DSS 65 — — Volts Drain Leakage Current VDS = 28 V, VGS = 0 V/Side IDSS — — 1.0 µA On-State Resistance VGS = 10 V, IDS = 1 A/Side RDS(on) — 0.13 — Ohms Quiescent Current Gate Voltage VDS = 28 V, ID = 700 mA/Side VGS(Q) 2.5 3.4 4 Volts Gate Leakage Current VGS = 10 V, VDS = 0 V/Side IGSS — — 100 nA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Volts Gate-Source Voltage VGS +15, -0.5 Volts Operating Junction Temperature TJ 200 °C Total Device Dissipation PD Above 25°C derate by 330 Watts 1.88 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.55 °C/W Typical Performance IMD vs. Output Power (PEP) 40 0 35 -5 Efficiency 15 IRL -15 -20 Gain -25 10 -30 V DD = 28 V, IDQ = 1.2 A POUT = 120 W PEP 5 0 2100 -40 -10 25 20 V DD = 28 V, f = 2170 MHz 7ZR-Tone Spacing = 100 kHz IMD (dBc) x 30 -30 IRL & IMD Gain (dB) & Efficiency (%) Broadband Linearity Performance 2120 2140 2160 IM3 2180 IDQ = 1.4 A IDQ = 1.2 A IDQ = 1.0 A -60 -35 -40 2200 -70 1 Frequency (MHz) Data Sheet Rev. A IDQ = 1.6 A -50 10 100 1000 Output Power (Watts PEP) 2 2002-10-08 PTF 102003 Typical Performance (cont.) IMD vs. Output Power Efficiency Efficiency IM3 -40 32 IM5 -50 IM7 24 16 -60 8 -70 0 140 0 20 40 60 80 100 120 15 Power Gain (dB) V DD = 28 V IDQ = 1.2 A -30 IMD dBc Power Gain vs. Output Power 40 14 13 IDQ = 1.6 A IDQ = 1.4 A 12 IDQ = 1.2 A IDQ = 1.0 A 11 10 1 10 Output Power (Watts-PEP) 160 0.80 3.07 0.99 5.33 0.98 7.60 0.97 9.87 0.96 0.95 -20 30 180 1.01 1.00 V GS = 0 V f = 1 MHz 120 20 100 15 80 Cds 60 10 40 5 Cdg 0 0 0 80 25 Cgs 140 20 12.13 30 1000 Capacitance vs. Supply Voltage (per side) * Voltage normalized to 1.0 V Series show current (A) Cds & Cgs (pF)x Bias Voltage (V) 1.02 100 Output Power (Watts CW) Gate-Source Voltage vs. Case Temperature 1.03 V DD = 28 V 130 Cdg (pF)x -20 10 20 30 40 Supply Voltage (Volts) Case Temperature (°C) * This part is internally matched. Measurements of the finished product will not yield these results. Data Sheet Rev. A 3 2002-10-08 PTF 102003 Broadband Circuit Impedance Z0 = 50 W VDD = 28 V, IDQ = 1.2 A, Pout = 20 W Avg 2 Tone 1 MHz Spacing Z Source D G G Z Load S D Frequency Z Source W Z Load W MHz R jX R jX 2100 5.2 -6.58 2.52 -7.6 2110 5.0 -6.62 2.48 -6.8 2140 4.9 -6.73 2.56 -6.2 2170 4.8 -6.85 2.62 -5.78 2200 4.7 -7.10 2.72 -5.17 Broadband Circuit Impedance Test Circuit Data Sheet Rev. A 4 2002-10-08 PTF 102003 Test Circuit (cont.) Test Circuit Schematic for 2170 MHz DUT l1, l21 l2 l3 l4, l14 l5, l7 l6, l8 l9, l15 l10, l16 l11, l17 l12, l18 l 13 l 19 l 20 PTF 102003 0.02 l @ 2170 MHz 0.07 l @ 2170 MHz 0.26 l @ 2170 MHz 0.50 l @ 2170 MHz 0.03 l @ 2170 MHz 0.08 l @ 2170 MHz 0.04 l @ 2170 MHz 0.06 l @ 2170 MHz 0.26 l @ 2170 MHz 0.02 l @ 2170 MHz 0.42 l @ 2170 MHz 0.27 l @ 2170 MHz 0.05 l @ 2170 MHz LDMOS Transistor Microstrip 29.20 W Microstrip 50 W Microstrip 20.10 W Microstrip 15.50 W Microstrip 13.10 W Microstrip 6.80 W Microstrip 5.50 W Microstrip 13.10 W Microstrip 53.60 W Microstrip 10.40 W Microstrip 53.60 W Microstrip 20.10 W Microstrip 50 W C1, C5, C8, C13 C2, C3, C7, C9, C6 C4 C12 C14 C10, C11 J1, J2 R1, R4 R2, R3 PCB Capacitor, 10 µF, 35 V, Tant TE Series SMD, Digi-Key PCS6106TR Capacitor, 6.8 pF, 100A 6R8 Capacitor, 1.6 pF, ATC 600B 1R6 BW Capacitor, 5.6 pF, 100B 5R6 Capacitor, 0.1 µF, 50 V, Digi-Key PCC103BCT Capacitor, 3.3 pF, ATC 600B 3R3 BW Connector, SMA Female, Panel Mount Resistor, 3.3 K ohms, 1/16W 5% 0603 Digi-Key P3.3K GCT Resistor, 1 K ohms, 1/16W 5% 0603 Digi-Key P1.0K GCT 4003, .020", 1 oz. copper both sides, 1 layer. AlliedSignal Assembly Diagram (not to scale) Data Sheet Rev. A 5 2002-10-08 PTF 102003 Case Outline Specifications Case 20275 Infineon Technologies Wireless Solutions Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International www.ericsson.com/rfpower e-mail: [email protected] Data Sheet Rev. A The latest and most complete information can be found on our website Data Sheet EUS/KR 1522-PTF 102003 Edition 10-08-02 © Infineon Technologies 2000-2002 – All Rights Reserved 6 2002-10-08