SUD50N03-10BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized rDS(on) () ID (A)a 0.010 @ VGS = 10 V 20 0.014 @ VGS = 4.5 V 18 V(BR)DSS (V) 30 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-10BP S N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175C)a TA = 25C TA = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25C Maximum Power Dissipation TA = 25C Operating Junction and Storage Temperature Range Unit V 20 ID 14 A IDM 100 IS 20 71b PD W 8.3a TJ, Tstg C –55 to 175 Parameter Maximum Junction-to-Ambienta Symbol t 10 sec Maximum 15 18 40 50 1.75 2.1 RthJA Steady State Maximum Junction-to-Case Typical Steady State RthJC Unit C/W Notes: a. Surface mounted on 1” x 1” FR4 Board, t 10 sec. b. See SOA curve for voltage derating. Document Number: 71227 S-01256—Rev. A, 19-Jun-00 www.vishay.com FaxBack 408-970-5600 1 SUD50N03-10BP New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, IDS = 250 mA 0.8 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 24 V, VGS = 0 V, TJ = 125C 50 On-State Drain Currenta ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 2 "100 VDS = 24 V, VGS = 0 V, TJ = 175C VDS = 5 V, VGS = 10 V rDS(on) Forward gfs A 0.0075 0.010 VGS = 10 V, ID = 15 A, TJ = 125C 0.016 VGS = 10 V, ID = 15 A, TJ = 175C 0.019 VGS = 4.5 V, ID = 15 A Transconductancea VDS = 15 V, ID = 15 A mA A 150 50 VGS = 10 V, ID = 15 A a D i S O S R i Drain-Source On-State Resistance nA 0.011 W 0.014 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs 1500 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 530 240 15.5 VDS = 15 V, V VGS = 5 V, V ID = 20 A 19 nC C 5 Gate-Drain Chargec Qgd 6 Turn-On Delay Timec td(on) 10 18 tr VDD = 15 V,, RL = 0.3 W 8 15 td(off) ID ] 20 A, VGEN = 10 V, RG = 2.5 W 25 45 tf 9 16 Rg 2.3 Rise Timec Turn-Off Delay Timec Fall Timec Gate Resistance ns W Source-Drain Diode Ratings and Characteristics (TC = 25C)b Continuous Current IS 50 Pulsed Current ISM 100 Forward Voltagea VSD IF = 100 A, VGS = 0 V 1.2 1.5 V trr IF = 20 A, di/dt = 100 A/ms 30 60 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2 Document Number: 71227 S-01256—Rev. A, 19-Jun-00 SUD50N03-10BP New Product Vishay Siliconix Output Characteristics Transfer Characteristics 200 100 VGS = 10 thru 6 V 5V 80 I D – Drain Current (A) I D – Drain Current (A) 160 120 4V 80 3V 40 60 40 TC = 125C 20 25C –55C 1, 2 V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.020 80 60 r DS(on) – On-Resistance ( ) TC = –55C 70 g fs – Transconductance (S) 1 25C 50 125C 40 30 20 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 10 0 0 0 20 40 60 80 100 0 20 40 ID – Drain Current (A) 80 100 24 30 ID – Drain Current (A) Capacitance Gate Charge 10 2400 V GS – Gate-to-Source Voltage (V) 2000 C – Capacitance (pF) 60 Ciss 1600 1200 800 Coss 400 Crss 0 VDS = 15 V ID = 50 A 8 6 4 2 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 71227 S-01256—Rev. A, 19-Jun-00 30 0 6 12 18 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 3 SUD50N03-10BP New Product Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 10 V ID = 15 A 1.2 0.8 TJ = 150C TJ = 25C 10 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Maximum Avalanche Drain Current vs. Ambient Temperature Safe Operating Area 1000 25 Limited by rDS(on) 10 ms 100 ms 100 I D – Drain Current (A) I D – Drain Current (A) 20 15 10 5 10 10 ms 100 ms 1 1s 0.1 0 1 ms 10 s 100 s dc TA = 25C Single Pulse 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TA – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 40C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 4 Document Number: 71227 S-01256—Rev. A, 19-Jun-00