ETC STD93003T4

STD93003

HIGH VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
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■
■
■
■
■
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REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
”T4”)
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix ”-1”)
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STD93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STD83003, its
complementary NPN transistor.
1
1
2
3
3
IPAK
TO-251
(Suffix ”-1”)
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CES
Collector-Emitter Voltage (V BE = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage
o
(I C = 0, IB = -0.75 A, t p < 10µs, T j < 150 C)
Collector Current
IC
I CM
IB
Collector Peak Current (tp < 5 ms)
Base Current
I BM
Base Peak Current (t p < 5 ms)
P t ot
Total Dissipation at T c = 25 C
T stg
Tj
o
St orage Temperature
Max. Operating Junction Temperature
October 2002
Value
Uni t
-500
V
-400
V
V (BR)EBO
V
-1.5
A
-3
A
-0.75
A
-1.5
A
20
-65 to 150
150
W
o
o
C
C
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STD93003
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
6.25
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
Parameter
Test Cond ition s
Min.
Collector Cut-off
Current (V BE = 0)
V CE = -500V
V CE = -500V
Emitter Base
Breakdown Voltage
(I C = 0)
I E = -10 mA
-5
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = -10 mA
L = 25 mH
-400
V (BR)EBO
Typ .
o
Tj = 125 C
Max.
Un it
-1
-5
mA
mA
-10
V
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = -0.5 A
I C = -0.35 A
IB = -0.1 A
I B = -50 mA
-0.5
-0.5
V
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = -0.5 A
IB = -0.1 A
-1
V
DC Current G ain
I C = -10 mA
I C = -0.35 A
I C = -1 A
V CE = -5 V
V CE = -5 V
V CE = -5 V
10
16
4
25
32
1.5
90
2.2
0.1
2.9
h FE∗
tr
ts
tf
RESISTIVE LO AD
Rise Time
Storage Time
Fall T ime
I C = -0.35 A
I B1 = -70 mA
T p ≥ 25 µs
V CC = 125 V
IB2 = 70 mA
(see Figure 2)
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
I C = -0.5 A
V BE(of f) = 5 V
V c la mp = 300 V
I B1 = -0.1 A
L = 10 mH
(see F igure 1)
E sb
Avalanche Energy
L = 4 mH
I BR ≤ 2.5 A
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
2/8
C = 1.8 nF
25 oC < TC < 125 o C
400
40
12
ns
µs
µs
ns
ns
mJ
STD93003
Safe Operating Area
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/8
STD93003
Resistive Fall Time
Resistive Storage Time
Inductive Fall Time
Inductive Storage Time
Reverse Biased SOA
4/8
STD93003
Figure 1: Inductive Load Switching Test Circuit.
1) F ast electronic switch
2) Non-inductive Resist or
3) F ast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) F ast electronic switch
2) Non-inductive Resist or
5/8
STD93003
TO-251 (IPAK) MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.028
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
B3
0.85
B5
B6
C
0.033
0.30
0.012
0.95
0.45
0.60
0.037
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.237
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
15.90
16.30
0.626
0.642
L
9.00
9.40
0.354
0.370
L1
0.80
1.20
0.031
L2
V1
0.80
10
o
1.00
0.047
0.031
10
0.039
o
P032NR/E
6/8
STD93003
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
L4
V2
0.8
0.60
0
o
0.031
1.00
o
8
0.024
0
o
0.039
0o
P032P_B
7/8
STD93003
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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