STD93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix ”T4”) THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix ”-1”) APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STD93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STD83003, its complementary NPN transistor. 1 1 2 3 3 IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CES Collector-Emitter Voltage (V BE = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage o (I C = 0, IB = -0.75 A, t p < 10µs, T j < 150 C) Collector Current IC I CM IB Collector Peak Current (tp < 5 ms) Base Current I BM Base Peak Current (t p < 5 ms) P t ot Total Dissipation at T c = 25 C T stg Tj o St orage Temperature Max. Operating Junction Temperature October 2002 Value Uni t -500 V -400 V V (BR)EBO V -1.5 A -3 A -0.75 A -1.5 A 20 -65 to 150 150 W o o C C 1/8 STD93003 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 6.25 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Test Cond ition s Min. Collector Cut-off Current (V BE = 0) V CE = -500V V CE = -500V Emitter Base Breakdown Voltage (I C = 0) I E = -10 mA -5 V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = -10 mA L = 25 mH -400 V (BR)EBO Typ . o Tj = 125 C Max. Un it -1 -5 mA mA -10 V V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = -0.5 A I C = -0.35 A IB = -0.1 A I B = -50 mA -0.5 -0.5 V V V BE(s at)∗ Base-Emitter Saturation Voltage I C = -0.5 A IB = -0.1 A -1 V DC Current G ain I C = -10 mA I C = -0.35 A I C = -1 A V CE = -5 V V CE = -5 V V CE = -5 V 10 16 4 25 32 1.5 90 2.2 0.1 2.9 h FE∗ tr ts tf RESISTIVE LO AD Rise Time Storage Time Fall T ime I C = -0.35 A I B1 = -70 mA T p ≥ 25 µs V CC = 125 V IB2 = 70 mA (see Figure 2) ts tf INDUCTIVE LOAD Storage Time Fall T ime I C = -0.5 A V BE(of f) = 5 V V c la mp = 300 V I B1 = -0.1 A L = 10 mH (see F igure 1) E sb Avalanche Energy L = 4 mH I BR ≤ 2.5 A ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %. 2/8 C = 1.8 nF 25 oC < TC < 125 o C 400 40 12 ns µs µs ns ns mJ STD93003 Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/8 STD93003 Resistive Fall Time Resistive Storage Time Inductive Fall Time Inductive Storage Time Reverse Biased SOA 4/8 STD93003 Figure 1: Inductive Load Switching Test Circuit. 1) F ast electronic switch 2) Non-inductive Resist or 3) F ast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) F ast electronic switch 2) Non-inductive Resist or 5/8 STD93003 TO-251 (IPAK) MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.028 0.051 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 B3 0.85 B5 B6 C 0.033 0.30 0.012 0.95 0.45 0.60 0.037 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.237 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 15.90 16.30 0.626 0.642 L 9.00 9.40 0.354 0.370 L1 0.80 1.20 0.031 L2 V1 0.80 10 o 1.00 0.047 0.031 10 0.039 o P032NR/E 6/8 STD93003 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 o 8 0.024 0 o 0.039 0o P032P_B 7/8 STD93003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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