NIKO-SEM P2503NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 30 25mΩ 7A P-Channel -30 45mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 7 -5 6 -4 20 -20 TC = 25 °C Continuous Drain Current Pulsed Drain Current ID TC = 70 °C 1 IDM TC = 25 °C Power Dissipation 2 PD TC = 70 °C Junction & Storage Temperature Range Tj, Tstg A W 1.3 -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient TYPICAL RθJA MAXIMUM UNITS 62.5 °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN UNIT TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th) VGS = 0V, ID = 250µA N-Ch 30 VGS = 0V, ID = -250µA P-Ch -30 VDS = VGS, ID = 250µA N-Ch 1 1.5 2.5 P-Ch -1 -1.5 -2.5 VDS = VGS, ID = -250µA 1 V May-12-2004 NIKO-SEM Gate-Body Leakage Zero Gate Voltage Drain Current IDSS N-Ch ±100 VDS = 0V, VGS = ±20V P-Ch ±100 VDS = 24V, VGS = 0V N-Ch 1 P-Ch -1 VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch 10 P-Ch -10 VDS = -20V, VGS = 0V, TJ = 55 °C On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 6A On-State VGS = -4.5V, ID = -4A RDS(ON) gfs N-Ch 20 P-Ch -20 N-Ch 25 37 P-Ch 58 80 25 P-Ch 34 45 N-Ch 19 P-Ch 11 N-Ch 790 N-Channel P-Ch 690 VGS = 0V, VDS = 10V, f = 1MHz N-Ch 175 P-Channel P-Ch 310 VGS = 0V, VDS = -10V, f = 1MHz N-Ch 65 P-Ch 75 N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, N-Ch 16 P-Ch 14 ID = 7A N-Ch 2.5 P-Channel P-Ch 2.2 VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 2.1 ID = -5A P-Ch 1.9 VDS = -5V, ID = -5A µA mΩ 18 VDS = 5V, ID = 7A nA A N-Ch VGS = 10V, ID = 7A VGS = -10V, ID = -5A Forward Transconductance1 SOP-8 Lead-Free VDS = 0V, VGS = ±20V IGSS VDS = -24V, VGS = 0V Drain-Source Resistance1 P2503NVG N- & P-Channel Enhancement Mode Field Effect Transistor S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge2 Qg Gate-Source Charge2 Qgs Gate-Drain Charge2 Qgd 2 pF nC May-12-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor Turn-On Delay Time2 Rise Time2 tr Turn-Off Delay Time2 N-Channel td(on) N-Ch 2.2 4.4 P-Ch 6.7 13.4 N-Ch 7.5 15 ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Ch 9.7 19.4 N-Ch 11.8 21.3 P-Ch 19.8 35.6 N-Ch 3.7 7.4 ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch 12.3 22.2 P-Channel td(off) tf SOP-8 Lead-Free VDD = 10V VDD = -10V Fall Time2 P2503NVG nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current 3 IS Pulsed Current ISM Forward Voltage1 VSD IF = 1A, VGS = 0V IF = -1A, VGS = 0V N-Ch 1.3 P-Ch -1.3 N-Ch 2.6 P-Ch -2.6 N-Ch 1 P-Ch -1 A V 1 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 2 REMARK: THE PRODUCT MARKED WITH “P2503NVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 3 May-12-2004 NIKO-SEM P2503NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 Is - Reverse Drain Current(A) V GS = 0V T A = 125° C 10 25° C 1 -55° C 0.1 0.01 0.001 4 0 0.2 0.4 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 May-12-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 5 P2503NVG SOP-8 Lead-Free May-12-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2503NVG SOP-8 Lead-Free P-CHANNEL -Is - Reverse Drain Current(A) 100 V GS = 0V 10 1 0.1 T A = 125° C 25° C -55° C 0.01 0.001 0 6 0.8 1.0 1.2 0.2 0.6 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 May-12-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 7 P2503NVG SOP-8 Lead-Free May-12-2004 NIKO-SEM P2503NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA Dimension mm Min. Typ. Max. A 4.8 4.9 5.0 B 3.8 3.9 C 5.8 D 0.38 Dimension Min. Typ. Max. H 0.5 0.715 0.83 4.0 I 0.18 0.254 0.25 6.0 6.2 J 0.445 0.51 K 1.27 E mm 0.22 0° 4° 8° L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N J F D E I G B H K C A 8 May-12-2004