S T M8401 S amHop Microelectronics C orp. May.26, 2004 ver1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID -30V -4.5A 25 @ V G S = 10V Max 55 @ V G S = -10V 40 @ V G S = 4.5V 85 @ V G S = -4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter N-C hannel P-C hannel Unit Drain-S ource Voltage V DS 30 -30 V Gate-S ource Voltage V GS 20 20 V Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed ID 7 - 4.5 A IDM 29 -18 A Drain-S ource Diode Forward C urrent a IS 1.7 -1.7 A Maximum P ower Dissipation a PD 2.0 T J , T S TG -55 to 150 Operating Junction and S torage Temperature R ange W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M8401 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 30 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 1.5 2.5 V GS =10V, ID = 9A 20 25 m ohm V GS =4.5V, ID= 7A 35 40 m ohm V DS = 10V, V GS = 10V 1 18 V A 5 S 848 PF 152 PF 104 PF 22.1 ns 19.3 ns 19 ns 16.6 ns V DS =15V, ID =9A,V GS =10V 17.6 nC V DS =15V, ID =9A,V GS =4.5V 8.5 nC 3.7 nC 3.2 nC V DS = 10V, ID = 5A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z c tD(ON) V DD = 15V, ID = 1A, V GS = 10V, R GE N = 6 tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =15V, ID = 9A, V GS =10V 2 S T M8401 P-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Parameter Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS -30 V uA ON CHAR ACTE R IS TICS b Forward Transconductance -1 -1.5 -2.5 V V GS =-10V, ID = -4.5A 45 55 m ohm V GS =-4.5V, ID = -3.6A 75 85 m ohm V DS = -5V, V GS = -10V -12 A 5 S 591 PF 129 PF 89 PF 7.1 ns 4.3 ns 58.3 ns 21.6 ns V DS =-15V,ID=-4.9A,V GS =-10V 13.2 nC V DS =-15V,ID=-4.9A,V GS =-4.5V 6.3 nC V DS =-15V, ID = - 4.9A, V GS =-10V 2.3 nC 3.3 nC V DS = -15V, ID = - 4.5A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =-15V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V D = -15V, R L = 15 ID = -1A, V GE N = -10V, R GE N = 6 3 S T M8401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter b DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage C Min Typ Max Unit Condition Symbol VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A VSD 0.78 1.2 -0.82 -1.2 N-Ch P-Ch Notes a.Surface Mounted on FR4 Board, t＜10sec. b.Pulse Test:Pulse Width＜300μs, Duty Cycle ＜ 2%. c.Guaranteed by design, not subject to production testing. N-Channel 25 10 -55 C 20 VGS=10,9,8,7,6,5,4,3V ID, Drain Current (A) ID, Drain Current(A) 8 6 4 VGS=1.5V 2 0 0 1 2 3 4 5 15 Tj=125 C 10 5 0 0.0 6 25 C 0.5 VDS, Drain-to-Source Voltage (V) 1 1.5 2 2.5 3 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VGS=10V 2.2 1200 RDS(ON), On-Resistance(Ohms) Ciss C, Capacitance (pF) 1000 800 600 Coss 400 200 Crss 5 10 15 20 25 1.4 1.0 0.6 0.4 0 -50 0 0 1.8 30 V G S =10V I D =9A -25 0 25 50 75 100 125 150 Tj( C) VDS, Drain-to Source Voltage (V) ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4 V 5 S T M8401 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V GS I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 1.15 1.10 I D =250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 6. B r eak down V oltage V ar iation with T emper atur e F igur e 5. G ate T hr eshold V ar iation with T emper atur e 25 20.0 20 Is , S ource-drain current (A) gF S , T rans conductance (S ) 5 V th, Normalized G ate-S ource T hres hold V oltage N-C hannel 15 10 5 V DS =10V 0 0 5 10 15 20 10.0 1.0 0.4 I DS , Drain-S ource C urrent (A) 0.6 0.8 1.0 1.2 1.4 V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent 5 F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent S T M8401 P-C hannel 20 10 -VGS=2.5V 6 -V G S =10,9,8,7,6,5 V 4 -VGS=1.5V 2 1 0 3 4 5 8 4 6 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C har acter istics F igure 2. Tr ansfer C har acter istics R DS (ON) , On-R es is tance(Ohms ) (Normalized) 1000 C , C apacitance (pF ) 12 0 2 1200 C is s 800 600 400 200 0 25 C -I D , Drain C urrent (A) -I D , Drain C urrent (A) 8 0 -55 C T j=125 C 16 C os s C rs s 0 5 10 15 20 25 30 1.8 1.6 V G S =-10V I D =-4.5A 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 T j, J unction T emperature ( C ) -V DS , Drain-to S ource Voltage (V ) F igure 4. On-R esistance Var iation with Temper ature F igure 3. C apacitance 6 S T M8401 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V GS I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 1.15 1.10 I D =-250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 6. B r eak down V oltage V ar iation with T emper atur e F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 20.0 12 -Is , S ource-drain current (A) gF S , T rans conductance (S ) 5 V th, Normalized G ate-S ource T hres hold V oltage P-C hannel 9 6 3 V DS =-10V 0 0 5 10 15 20 10.0 1.0 0.4 -I DS , Drain-S ource C urrent (A) 0.6 0.8 1.0 1.2 1.4 -V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent 7 F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent S T M8401 40 10 8 I D , Drain C urrent (A) V DS =15V I D =9A 6 4 2 10 RD ON S( 0 4 8 12 16 20 24 )L im it 10m 100 11 s ms 1s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.03 0 0.1 28 32 Q g, T otal G ate C harge (nC ) 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igur e 10. M aximum Safe O per ating A r ea F igur e 9. G ate C har ge P-C hannel 50 10 V DS =-15V I D =-4.9A 8 -I D , Drain C urrent (A) -V G S , G ate to S ource V oltage (V ) 5 V G S , G ate to S ource V oltage (V ) N-C hannel 6 4 2 0 10 R 2 4 6 8 10 12 Q g, T otal G ate C harge (nC ) N) L im it 10m 11 s ms 1s DC 0.1 V G S =-10V S ingle P ulse T A =25 C 0.1 14 16 (O 100 0.03 0 DS 1 10 50 -V DS , B ody Diode F orward V oltage (V ) F igur e 10. M aximum Safe O per ating A r ea F igur e 9. G ate C har ge 8 S T M8401 V DD ton V IN D td(off) V OUT V OUT 10% 5 tf 90% 90% VG S R GE N toff tr td(on) RL INVE R TE D 10% G 90% V IN S 50% 50% 10% P ULS E WIDTH F igur e 12. Switching W avefor ms F igur e 11. Switching T est C ir cuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 Duty C ycle=0.5 0.2 P DM 0.1 0.1 t1 0.05 1. 2. 3. 4. 0.02 S ingle P uls e 0.01 10 -4 10 -3 10 -2 10 -1 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igur e 13. Nor malized T her mal T r ansient I mpedance C ur ve 9 t2 10 100 S T M8401 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45° B 0.016 TYP. S Y MB OLS A A1 D E H L A1 e 0.05 TYP. 0.008 TYP. H MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° 10 INC HE S MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° S T M8401 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 D0 D1 E E1 E2 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 M N W W1 H K 330 ± 1 62 ±1.5 P1 P2 T 8.0 4.0 2.0 ±0.05 0.3 ±0.05 S G R V P0 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 12.4 + 0.2 16.8 - 0.4 11 ψ12.75 + 0.15 2.0 ±0.15