Power Transistors 2SB1593 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping 0.85±0.1 1.0±0.1 0.8 C ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −29 V Collector-emitter voltage (Resistor between B and E) VCER −29 V Collector-emitter voltage (Base open) VCEO −20 V Emitter-base voltage (Collector open) VEBO −11 V Collector current IC −3 A Peak collector current ICP −10 A Collector power dissipation PC 1.5 W 16.0±1.0 2.5±0.1 0.65±0.1 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 1 2 2.5±0.2 Tj 150 °C Storage temperature Tstg −55 ∼ +150 °C 0.4±0.1 0.5±0.1 0.8 C Junction temperature 0.8 C 3 2.05±0.2 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emiter open) VCBO IC = −10 µA, IE = 0 −29 V Collector-emitter voltage (Resistor between B and E) VCER IC = −1 mA, RBE = 10 kΩ −29 V Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −20 V Emiter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −11 V hFE VCE = −2 V, IC = −2.6 A 100 VCE(sat) IC = −2.6 A, IB = −40 mA − 0.3 VCB = −10 V, IE = 50 mA, f = 200 MHz 200 VCB = −10 V, IE = 0, f = 1 MHz 110 Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) fT Cob Conditions Min Typ Max Unit 450 − 0.5 V MHz 150 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: April 2003 SJD00085BED 1 2SB1593 IC VCE −6 TC=25˚C −5 15 Collector current IC (A) (1) 10 5 −4 IB=–12mA −3 –10mA –8mA −2 –6mA –2mA (2) 0 0 40 80 120 0 160 Ambient temperature Ta (°C) −1 0 Forward current transfer ratio hFE Collector current IC (A) –25˚C −8 −6 −4 0 − 0.4 − 0.8 −1.2 −1.6 −6 − 0.001 − 0.01 −2.0 Base-emitter voltage VBE (V) −2.4 103 25˚C Ta=100˚C –25˚C 102 10 1 − 0.01 − 0.1 −1 Collector current IC (A) SJD00085BED − 0.1 −1 −10 Collector current IC (A) Cob VCB VCE=–2V VCE=–2V 25˚C Ta=100˚C −5 –25˚C hFE IC −2 2 −4 104 −10 0 −3 Ta=100˚C 25˚C −1 Collector-emitter voltage VCE (V) IC VBE −12 −2 IC/IB=65 − 0.01 –4mA −1 −10 − 0.1 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector power dissipation PC (W) (1)TC=Ta (2)Without heat sink (PC=2.0W) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) PC Ta 20 −10 240 IE=0 f=1MHz TC=25˚C 200 160 120 80 40 0 −1 −10 −100 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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