Si7850DP New Product Vishay Siliconix N-Channel 60-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 10.3 0.031 @ VGS = 4.5 V 8.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching APPLICATIONS D Primary Side Switch for 24-V DC/DC Applications D Secondary Synchronous Rectifier PowerPAKt SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G G 4 D 8 D 7 D S 6 D 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 85_C Continuous Source Current ID IS Pulsed Drain Current 6.2 7.5 4.5 3.7 1.5 40 Avalanche Currentb IAS 15 Single Avalanche Energyb EAS 11 TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V 10.3 IDM A mJ 4.5 1.8 2.3 0.9 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 22 28 58 70 2.6 3.3 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Guaranteed by design, not subject to production testing. Document Number: 71625 S-03828—Rev. A, 28-May-01 www.vishay.com 1 Si7850DP New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductancea Diode Forward Voltagea V "100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55_C 20 VDS w 5 V, VGS = 10 V nA m mA 40 A VGS = 10 V, ID = 10.3 A 0.018 0.022 VGS = 4.5 V, ID = 8.7 A 0.025 0.031 gfs VDS = 15 V, ID = 10.3 A 26 VSD IS = 3.8 A, VGS = 0 V 0.85 1.2 18 27 VDS = 30 V, VGS = 10 V, ID = 10.3 A 3.4 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 5.3 RG 1.4 td(on) 10 20 10 20 25 50 12 24 50 80 Gate-Resistance Turn-On Delay Time Rise Time tr Turn-Off Delay Time VDD = 30 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 3.8 A, di/dt = 100 A/ms nC W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 5 V 32 I D – Drain Current (A) I D – Drain Current (A) 32 24 4V 16 8 24 16 TC = 150_C 8 25_C –55_C 3V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Document Number: 71625 S-03828—Rev. A, 28-May-01 Si7850DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance On-Resistance vs. Drain Current 1400 1200 0.05 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 0.06 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 0.01 Ciss 1000 800 600 400 Coss 200 0.00 Crss 0 0 8 16 24 32 40 0 10 ID – Drain Current (A) 30 40 50 60 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 10 2.0 VDS = 30 V ID = 10.3 A 8 VGS = 10 V ID = 10.3 A 1.8 r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 20 6 4 2 1.6 1.4 1.2 1.0 0.8 0 0 4 8 12 16 0.6 –50 20 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 50 TJ = 150_C r DS(on) – On-Resistance ( W ) I S – Source Current (A) 0.05 TJ = 25_C 10 ID = 10.3 A 0.03 0.02 0.01 0.00 1 0.00 0.04 0.5 1.0 1.5 2.0 VSD – Source-to-Drain Voltage (V) Document Number: 71625 S-03828—Rev. A, 28-May-01 2.5 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7850DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power Threshold Voltage 0.4 100 80 ID = 250 mA –0.0 Power (W) V GS(th) Variance (V) 0.2 –0.2 –0.4 60 40 –0.6 20 –0.8 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.01 1 0.1 10 100 600 Time (sec) TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 58_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com 4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Document Number: 71625 S-03828—Rev. A, 28-May-01