BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. VDS (V) PL(AV) (W) PL(M)[1] (W) Gp (dB) ηD (%) ACPR885k (dBc) ACPR1980k (dBc) Mode of operation f (MHz) 1-carrier N-CDMA[2] 3400 to 3600 28 9 70 14 23 −49[3] −64[3] [1] PL(M) stands for peak output power. [2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. [3] Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W: Qualified up to a maximum VDS operation of 32 V Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation Internally matched for ease of use Low gold plating thickness on leads Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 1.3 Applications RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3800 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G38-50 (SOT502A) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 BLF6G38LS-50 (SOT502B) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G38-50 - flanged ceramic package; 2 mounting holes; 2 leads SOT502A BLF6G38LS-50 - earless flanged ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF6G38-50_BLF6G38LS-50 Product data sheet Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 16.5 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 June 2010 © NXP B.V. 2010. All rights reserved. 2 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-case) thermal resistance from Tcase = 80 °C; junction to case PL = 50 W Type Typ Unit BLF6G38-50 0.9 - BLF6G38LS-50 0.7 - 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.4 mA 65 - - V 2 2.4 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 80 mA 1.4 IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 11.8 16.4 - A IGSS gate leakage current VGS = +11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 2.8 A - 5.6 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 2.8 A - 0.18 0.29 Ω Crs feedback capacitance - 1.17 - pF VGS = 0 V; VDS = 28 V; f = 1 MHz 7. Application information Table 7. Application information Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 450 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter Conditions Min Typ Max Unit PL(M) peak output power PL(AV) = 9 W 65 70 - W Gp power gain PL(AV) = 9 W 12.5 14 - dB RLin input return loss PL(AV) = 9 W - −10 - dB ηD drain efficiency PL(AV) = 9 W 20 23 - % PL(AV) = 9 W [1] −46 −49 - dBc ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) = 9 W [1] −62 −64 - dBc ACPR885k [1] adjacent channel power ratio (885 kHz) Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 450 mA; PL = PL(1dB); f = 3600 MHz. BLF6G38-50_BLF6G38LS-50 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 June 2010 © NXP B.V. 2010. All rights reserved. 3 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description Frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB. Table 8. Frame structure Frame contents Modulation technique Data length Zone 0 FCH 2 symbols × 4 subchannels QPSK1/2 3 bit Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit 7.2.2 Graphs 001aah395 5 001aah396 15 Gp Gp (dB) EVM (%) 30 ηD (%) 4 13 24 3 11 18 2 9 12 1 7 6 ηD 5 0 0 4 8 12 0 PL(AV) (W) VDS = 28 V; IDq = 450 mA; f = 3500 MHz. EVM as a function of average load power; typical values BLF6G38-50_BLF6G38LS-50 Product data sheet 0 12 8 PL(AV) (W) VDS = 28 V; IDq = 450 mA; f = 3500 MHz. Fig 1. 4 Fig 2. Power gain and drain efficiency as functions of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 June 2010 © NXP B.V. 2010. All rights reserved. 4 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 001aah397 −20 ACPR (dBc) −30 (1) −40 −50 (2) (3) −60 −70 0 4 8 12 PL(AV) (W) VDS = 28 V; IDq = 450 mA; f = 3500 MHz. (1) f = 10 MHz (2) f = 20 MHz (3) f = 30 MHz Fig 3. Adjacent channel power ratio as a function of average load power; typical values 7.3 Single carrier N-CDMA broadband performance at 9 W average 7.3.1 Graphs 001aah398 16 Gp (dB) 15 26 ηD (%) 25 Gp 24 14 13 001aah399 −40 ACPR (dBc) (1) (2) −50 ACPR1500k 23 ηD ACPR885k (1) (2) 22 12 −60 (1) 11 21 10 3400 3450 3500 20 3600 3550 ACPR1980k (2) −70 3400 3450 3500 f (MHz) 3550 3600 f (MHz) VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as functions of frequency; typical values BLF6G38-50_BLF6G38LS-50 Product data sheet Fig 5. Adjacent channel power ratio as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 June 2010 © NXP B.V. 2010. All rights reserved. 5 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 001aah400 18 40 ηD (%) Gp (dB) 16 30 001aah401 −30 ACPR (dBc) −40 −50 Gp 14 20 −60 12 (1) 10 ηD (1) (2) ACPR885k ACPR1500k −70 (2) (1) (2) ACPR1980k 10 10−1 0 1 102 10 −80 10−1 1 102 10 PL (W) PL (W) VDS = 28 V; IDq = 450 mA; f = 3500 MHz; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. VDS = 28 V; IDq = 450 mA; f = 3500 MHz; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as functions of load power; typical values Fig 7. 001aah402 16 Adjacent channel power ratio as a function of load power; typical values 001aah403 1.5 Gp (dB) Pi (W) 15 1.0 (2) (3) (2) (1) (1) 14 (3) 0.5 13 12 10−1 1 0 10−1 102 10 VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 3400 MHz (2) f = 3500 MHz (2) f = 3500 MHz (3) f = 3600 MHz (3) f = 3600 MHz Power gain as a function of load power; typical values BLF6G38-50_BLF6G38LS-50 Product data sheet 102 10 VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 3400 MHz Fig 8. 1 PL (W) PL (W) Fig 9. Input power as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 June 2010 © NXP B.V. 2010. All rights reserved. 6 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 8. Test information C8 R2 C10 C9 C4 C7 L1 C6 C3 R1 C1 C2 C5 BLF6G38-50 BLF6G38-50 INPUT-REV 1A 30RF35 NXP OUTPUT-REV 1A 30RF35 NXP 001aah404 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit Table 9. List of components For test circuit, see Figure 10. Component Description Value Remarks C1, C4, C5, C6 multilayer ceramic chip capacitor 10 pF [1] C2 multilayer ceramic chip capacitor 0.7 pF [1] C3, C8, C9 multilayer ceramic chip capacitor 100 nF [2] C7 multilayer ceramic chip capacitor 10 μF; 50 V [3] C10 electrolytic capacitor 470 μF; 63 V R1, R2 SMD resistor 9.1 Ω L1 ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent [1] American Technical Ceramics type 100A or capacitor of same quality. [2] Vishay VJ1206Y104KXB or capacitor of same quality. [3] TDK C5750X7R1H106M or capacitor of same quality. Table 10. BLF6G38-50_BLF6G38LS-50 Product data sheet Measured test circuit impedances f Zi Zo (GHz) (Ω) (Ω) 3.4 5.48 − j9.38 12.42 − j4.58 3.5 5.39 − j9.43 10.41 − j5.31 3.6 5.55 − j9.15 14.31 − j7.04 3.8 9.60 − j12.48 17.70 − j11.57 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 June 2010 © NXP B.V. 2010. All rights reserved. 7 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 11. Package outline SOT502A BLF6G38-50_BLF6G38LS-50 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 June 2010 © NXP B.V. 2010. All rights reserved. 8 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 12. Package outline SOT502B BLF6G38-50_BLF6G38LS-50 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 June 2010 © NXP B.V. 2010. All rights reserved. 9 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CW Continuous Wave EVM Error Vector Magnitude FCH Frame Control Header FFT Fast Fourier Transform IBW Instantaneous BandWidth LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio PUSC Partial Usage of SubChannels RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio WCS Wireless Communications Service WiMAX Worldwide Interoperability for Microwave Access 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G38-50_BLF6G38LS-50 v.2 20100601 Product data sheet - BLF6G38-50_BLF6G38LS-50_1 Modifications: BLF6G38-50_BLF6G38LS-50_1 BLF6G38-50_BLF6G38LS-50 Product data sheet • • Data sheet status changed from preliminary to product. Section 12 “Legal information” updated. 20080212 Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 June 2010 - © NXP B.V. 2010. All rights reserved. 10 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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All rights reserved. 11 of 13 NXP Semiconductors BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G38-50_BLF6G38LS-50 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 June 2010 © NXP B.V. 2010. All rights reserved. 12 of 13 NXP Semiconductors BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier N-CDMA broadband performance at 9 W average . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 1 June 2010 Document identifier: BLF6G38-50_BLF6G38LS-50