DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification Supersedes data of 1996 Jan 26 1997 Oct 27 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES PINNING - SOT262A2 • Internal input and output matching for easy matching, high gain and efficiency PIN SYMBOL • Poly-silicon emitter ballasting resistors for an optimum temperature profile 1 c1 collector 1 2 c2 collector 2 3 b1 base 1 4 b2 base 2 5 e common emitter; connected to flange • Gold metallization ensures excellent reliability. APPLICATIONS DESCRIPTION • Base station transmitters in the 800 to 960 MHz range. DESCRIPTION c1 handbook, halfpage 1 Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter class-AB operation. The transistors are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps. The flange provides the common emitter connection for both transistors. 2 b1 e 5 b2 5 3 4 Top view MAM031 c2 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) d3 (dBc) CW, class-AB 900 26 150 ≥8 ≥45 − 960 26 150 ≥7.5 ≥45 − 900 26 150 (PEP) ≥8.5 ≥35 ≤−30 960 26 150 (PEP) ≥8 ≥35 ≤−30 2-tone, class-AB WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Oct 27 2 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section VCBO collector-base voltage open emitter − 70 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 12 A IC(AV) average collector current − 12 A Ptot total power dissipation (DC) − 340 W Tstg storage temperature Tmb = 25 °C −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink CONDITIONS Ptot = 340 W; Tmb = 25 °C; note 1 MAX. UNIT 0.52 K/W 0.15 K/W Note 1. Total device; both sections equally loaded; thermal resistance is determined under specified RF operating conditions. 1997 Oct 27 3 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)CBO collector-base breakdown voltage open emitter; IC = 60 mA 70 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 150 mA 30 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 3 mA 3 − − V mA ICES collector leakage current VBE = 0; VCE = 28 V − − 5 hFE DC current gain VCE = 10 V; IC = 4.5 A; note 1 30 − 120 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz; note 2 − 75 − pF Notes 1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.01. 2. Value Cc is that of the die only, it is not measurable because of internal matching network. MLD256 80 MLD257 300 handbook, halfpage handbook, halfpage h FE Cc (pF) (1) 60 200 (2) 40 100 20 0 0 4 8 12 0 16 I C (A) 0 10 20 30 40 50 VCB (V) Measured under pulsed conditions; tp ≤ 300 µs; δ ≤ 0.01. (1) VCE = 26 V. (2) VCE = 10 V. Value Cc is that of the die only, it is not measurable because of internal matching network. IE = ie = 0; f = 1 MHz. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. 1997 Oct 27 4 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF push-pull power transistor BLV950 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter push-pull test circuit; Rth mb-h = 0.15 K/W. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) d3 (dBc) CW, class-AB 900 26 2 × 100 150 ≥8 typ. 9 ≥45 typ. 50 − 960 26 2 × 100 150 ≥7.5 typ. 8.5 ≥45 typ. 50 − note 1 26 2 × 100 150 (PEP) ≥8.5 typ. 9.5 ≥35 typ. 40 ≤−28 typ. −31 note 2 26 2 × 100 150 (PEP) ≥8 typ. 9 ≥35 typ. 40 ≤−30 typ. −33 2-tone, class-AB Notes 1. f1 = 900.0 MHz; f2 = 900.1 MHz. 2. f1 = 960.0 MHz; f2 = 960.1 MHz. Ruggedness in class-AB operation The BLV950 is capable of withstanding a load mismatch corresponding to VSWR = 2 : 1 through all phases under the conditions: PL = 150 W; f = 960 MHz; VCE = 26 V; ICQ = 2 × 100 mA; Th = 25 °C; Rth mb-h = 0.15 K/W and also a load mismatch of VSWR = 5 : 1 through all phases at PL = 150 W (PEP) and f1 = 960.0 MHz and f2 = 960.1 MHz. MLD258 12 MLD259 60 handbook, halfpage Gp 8 PL (W) ηC (%) Gp (dB) 200 handbook, halfpage 150 40 ηC 100 20 4 50 0 200 0 0 50 100 150 0 0 10 20 P L (W) VCE = 26 V; ICQ = 2 × 100 mA; f = 960 MHz. VCE = 26 V; ICQ = 2 × 100 mA; f = 960 MHz. Fig.4 Fig.5 Power gain and efficiency as functions of load power; typical values. 1997 Oct 27 5 P i (W) 30 Load power as a function of input power; typical values. Philips Semiconductors Product specification UHF push-pull power transistor BLV950 MLD260 12 MLD261 60 handbook, halfpage 200 PL (PEP) (W) handbook, halfpage ηC (%) Gp (dB) 150 Gp 40 8 100 ηC 4 20 50 0 0 50 100 0 150 200 P L (PEP) (W) 0 0 10 20 30 Pi (PEP) (W) VCE = 26 V; ICQ = 2 × 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz. VCE = 26 V; ICQ = 2 × 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz. Fig.6 Fig.7 Power gain and efficiency as functions of load power; typical values. MLD262 25 handbook, halfpage d im (dBc) 30 d3 35 d5 40 d7 45 0 50 100 150 200 P L (PEP) (W) VCE = 26 V; ICQ = 2 × 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz. Fig.8 Intermodulation distortion as a function of load power; typical values. 1997 Oct 27 6 Load power as a function of input power; typical values. Philips Semiconductors Product specification UHF push-pull power transistor BLV950 handbook, full pagewidth V bias C3 L8 C2 C5 C7 C9 L14 VS R5 C1 R1 C4 C8 C6 ,,,,, ,,,,, ,,, ,,,,, ,,,,,,,, ,,, ,,,,,,,, ,,,,, C35 C19 L16 L20 L3 C22 C24 C20 L21 L23 L18 C38 C17 R4 C39 R6 C42 C41 V bias VS C11 L13 C12 C14 C16 L19 C18 C40 MLD263 Fig.9 Class-AB test circuit at 900 to 960 MHz. 1997 Oct 27 L30 C37 L12 C15 C26 L17 C36 C13 L28 L25 L27 L7 R2 C25 C28 L5 C10 C27 L29 C23 L11 L22 L24 L26 DUT L2 C21 ,,,, ,,,, ,,,,,,, ,,,,,,, ,,,, ,,,, L15 L6 L1 C29 C34 L10 L4 C30 R3 C33 L9 input 50 Ω C31 C32 7 output 50 Ω Philips Semiconductors Product specification UHF push-pull power transistor BLV950 List of components (see Figs 9 and 10) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C10 tantalum capacitor 2.2 µF, 35 V C2, C11, C30, C34, C37, C41 multilayer ceramic chip capacitor; note 1 300 pF, 200 V C3, C12 electrolytic capacitor 1 µF, 63 V 2222 085 78108 C4, C13 electrolytic capacitor 10 µF, 16 V 2222 085 75109 C5, C14, C31, C40 tantalum capacitor 1 µF, 35 V 2022 019 00056 C6, C15, C29, C42 multilayer ceramic chip capacitor 100 nF, 50 V 2222 581 76641 C7, C16 multilayer ceramic chip capacitor 10 nF, 50 V 2222 581 76627 C8, C17 multilayer ceramic chip capacitor; note 1 330 pF, 200 V C9, C18, C19, C20, C35, C36 multilayer ceramic chip capacitor; note 1 39 pF, 500 V C23 multilayer ceramic chip capacitor; note 1 2 pF, 500 V C25 multilayer ceramic chip capacitor; note 1 3.9 pF, 500 V C21, C22 film dielectric trimmer 9 pF 2222 809 09005 C24, C26 film dielectric trimmer 3.5 pF 2222 809 05215 C27, C28 multilayer ceramic chip capacitor; note 1 68 pF, 500 V C32, C39 electrolytic capacitor 10 µF, 63 V 2222 030 28109 C33, C38 electrolytic capacitor 1 µF, 63 V 2222 030 38108 L1, L3 stripline; note 2 35 Ω length 50.7 mm width 4 mm L2 semi-rigid cable; note 3 50 Ω ext. conductor length 50.7 mm ext. diameter 2.2 mm L4, L5 stripline; note 2 35 Ω length 26.5 mm width 4 mm L6, L7 stripline; note 2 20 Ω length 9.2 mm width 8 mm L10, L11, L16, L17 stripline; note 2 7Ω length 2.5 mm width 27 mm L8, L13, L14, L19 grade 4S2 Ferroxcube chip-bead 2022 019 00058 4330 030 36300 L9, L12 microchoke 4.7 µH L15, L18 4 turns enamelled 1 mm copper wire 100 nH int. diameter 6 mm close wound L20, L21 stripline; note 2 14 Ω length 6 mm width 12.5 mm 1997 Oct 27 8 4322 057 04781 Philips Semiconductors Product specification UHF push-pull power transistor COMPONENT BLV950 DESCRIPTION VALUE DIMENSIONS CATALOGUE No. L22, L23 stripline; note 2 14 Ω length 7 mm width 12.5 mm L24, L25 stripline; note 2 18 Ω length 11 mm width 9 mm L26, L27 stripline; note 2 50 Ω length 6.5 mm width 2.5 mm L28, L30 stripline; note 2 30 Ω length 49.3 mm width 5 mm L29 semi-rigid cable; note 3 50 Ω ext. conductor length 49.3 mm ext. diameter 3.6 mm R5, R6 metal film resistor 0.4 W, 1 Ω 2322 151 71008 R1, R2 metal film resistor 0.4 W, 5.11 Ω 2322 151 75118 R3, R4 metal resistor 1 W, 5.11 Ω 2322 153 75118 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE microfibre-glass dielectric (εr = 2.2); thickness 1⁄32"; thickness of the copper sheet 2 × 35 µm. 3. Semi-rigid cables soldered respectively on striplines L1 and L28. 1997 Oct 27 9 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 64.5 handbook, full pagewidth 68.5 85 85 C3 C5 C7 C2 V bias C1 R5 R1 L8 C8 C4 C6 C33 C32 C35 L15 C9 L9 C29 V S L28 L29 L20 L22 L24 L6 C19 L4 L26C27 C25 C23 C21 C20 L5 C26 C24 C22 L27 C28 L7 L25 L11 L1 L2 V bias C30 R3 L16 L10 L3 L14 C31 C34 R6 C10 L21 L23 L17 L13 C13 C15 L12 C17 R2 C18 L18 C36 C11 C12 C14 C16 L30 L19 C41 C37 R4 C40 C42 VS C38 C39 MLD264 Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.10 Component layout and printed-circuit board for 900 to 960 MHz class-AB test circuit. 1997 Oct 27 10 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 MLD266 - 1 MLD265 - 1 4 8 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 6 RL 2 4 0 xi 2 XL −2 0 −2 840 880 920 960 −4 840 1000 f (MHz) 880 960 920 1000 f (MHz) VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device); Th = 25 °C; Rth mb-h = 0.15 K/W. VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device); Th = 25 °C; Rth mb-h = 0.15 K/W. Fig.11 Input impedance as a function of frequency (series components); typical values per section. Fig.12 Load impedance as a function of frequency (series components); typical values per section. MLD267 12 handbook, halfpage Gp (dB) 8 handbook, halfpage 4 Zi ZL 0 840 880 920 960 MBA451 1000 f (MHz) VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device); Th = 25 °C; Rth mb-h = 0.15 K/W. Fig.13 Power gain as a function of frequency; typical values. 1997 Oct 27 Fig.14 Definition of transistor impedance. 11 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A2 D A F U1 B q C w2 M C H1 1 H c 2 E1 p U2 5 E w1 M A B A 3 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.39 4.62 5.85 5.58 0.16 0.10 inches 0.212 0.182 0.230 0.006 0.220 0.004 OUTLINE VERSION D F H H1 p Q q U1 U2 w1 w2 w3 21.98 10.27 10.29 11.05 21.71 10.05 10.03 1.78 1.52 20.58 20.06 17.02 16.51 3.28 3.02 2,47 2.20 27.94 34.17 33.90 9.91 9.65 0.51 1.02 0.25 0.865 0.404 0.405 0.435 0.855 0.395 0.396 0.070 0.060 0.81 0.79 0.67 0.65 0.129 0.119 0.097 1.100 0.087 1.345 1.335 0.390 0.380 0.02 0.04 0.01 e E E1 REFERENCES IEC JEDEC EIAJ SOT262A2 1997 Oct 27 EUROPEAN PROJECTION ISSUE DATE 97-06-28 12 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127067/00/03/pp16 Date of release: 1997 Oct 27 Document order number: 9397 750 02842