ONSEMI BSS138LT3

BSS138LT1
Preferred Device
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
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200 mA, 50 V
RDS(on) = 3.5 Features
• Pb−Free Packages are Available
• Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for
•
N−Channel
3
Low Voltage Applications
Miniature SOT−23 Surface Mount Package Saves Board Space
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
50
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 s)
ID
IDM
200
800
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to
150
°C
RJA
556
°C/W
TL
260
°C
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
2
3
SOT−23
CASE 318
STYLE 21
mA
1
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
J1
M
= Device Code
= Date Code
J1M
1
Gate
2
Source
ORDERING INFORMATION
Shipping†
Device
Package
BSS138LT1
SOT−23
3000 Tape & Reel
SOT−23
(Pb−Free)
3000 Tape & Reel
SOT−23
10,000 Tape & Reel
SOT−23
(Pb−Free)
10,000 Tape & Reel
BSS138LT1G
BSS138LT3
BSS138LT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3
1
Publication Order Number:
BSS138LT1/D
BSS138LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
−
−
Vdc
−
−
−
−
0.1
0.5
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Adc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±0.1
Adc
Gate−Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
−
1.5
Vdc
Static Drain−to−Source On−Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
−
−
5.6
−
10
3.5
gfs
100
−
−
mmhos
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
−
40
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
−
12
25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
−
3.5
5.0
td(on)
−
−
20
td(off)
−
−
20
ON CHARACTERISTICS (Note 1)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 30 Vdc,
Vdc ID = 0.2
0 2 Adc,)
Adc )
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
ns
BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
VGS = 3.25 V
0.6
VGS = 3.0 V
0.5
VGS = 2.75 V
0.4
VGS = 2.5 V
0.3
0.2
0.1
0
VDS = 10 V
0.8
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
0.7
0.9
VGS = 3.5 V
TJ = 25°C
− 55°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
0
10
0
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
2.2
1.25
ID = 1.0 mA
2
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
ID = 0.8 A
1.8
1.6
VGS = 4.5 V
ID = 0.5 A
1.4
1.2
1
1.125
1
0.875
0.8
0.6
−55
−5
45
95
0.75
−55
145
−30
−5
20
45
70
95
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. Threshold Voltage Variation
with Temperature
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
25°C
10
VDS = 40 V
TJ = 25°C
8
6
4
ID = 200 mA
2
0
0
500
1000
1500
2000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
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3
2500
3000
145
BSS138LT1
10
VGS = 2.5 V
9
8
150°C
7
6
5
25°C
4
−55°C
3
2
1
0.05
0
0.15
0.1
0.25
0.2
ID, DRAIN CURRENT (AMPS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
8
5
4
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
150°C
5
4.5
4
3.5
3
25°C
2.5
2
−55°C
1.5
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.45
0.4
25°C
3
2
1
−55°C
0.05
0
0.25
0.2
ID, DRAIN CURRENT (AMPS)
0.5
4.5
VGS = 10 V
4
150°C
3.5
3
2.5
25°C
2
−55°C
1.5
1
0
0.05
0.1
ID, DRAIN CURRENT (AMPS)
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (AMPS)
Figure 9. On−Resistance versus Drain Current
Figure 8. On−Resistance versus Drain Current
1
I D , DIODE CURRENT (AMPS)
0.15
0.1
Figure 7. On−Resistance versus Drain Current
VGS = 4.5 V
5.5
150°C
6
Figure 6. On−Resistance versus Drain Current
6
VGS = 2.75 V
7
120
100
TJ = 150°C
0.1
25°C
−55°C
80
60
Ciss
0.01
40
Coss
20
0.001
0
0.2
0.4
0.6
0.8
1.0
0
1.2
Crss
0
5
10
15
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
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4
20
25
BSS138LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
A
L
3
1
V
B S
2
G
DIM
A
B
C
D
G
H
J
K
L
S
V
C
D
H
J
K
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
BSS138LT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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Phone: 81−3−5773−3850
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6
For additional information, please contact your
local Sales Representative.
BSS138LT1/D